Structure for monitoring stress-induced degradation of conductive interconnects
First Claim
1. A semiconductor chip, comprising:
- a plurality of active semiconductor devices;
a dielectric material overlying the active semiconductor devices;
a plurality of metallic interconnects insulated and supported by said dielectric material, at least some of said conductive interconnects including;
a metallic plate having an upper surface, a lower surface, and a plurality of peripheral edges extending between said upper surface and said lower surface, said upper surface defining a horizontally extending plane, said metallic gate having a width in a widthwise direction, a length in a lengthwise direction, and a thickness in a direction of a height of said upper surface from said lower surface;
a metallic connecting line having an upper surface at least substantially level with said upper surface of said metallic plate, an inner end connected to said metallic plate at one of said peripheral edges, and an outer end horizontally displaced from said one peripheral edge, said metallic connecting line having a width much smaller than said width of said metallic plate and a length greater than said width of said metallic plate;
a metal feature disposed at a wiring level higher than said metallic connecting line; and
an upper metallic via connected with said metal feature and extending through said dielectric material, said upper metallic via having a bottom end in contact with said metallic connecting line at a location horizontally displaced from said one peripheral edge by at least about 3 microns (μ
m).
3 Assignments
0 Petitions
Accused Products
Abstract
A microelectronic element such as a chip or microelectronic wiring substrate is provided which includes a plurality of conductive interconnects for improved resistance to thermal stress. At least some of the conductive interconnects include a metallic plate, a metallic connecting line and an upper metallic via. The metallic connecting line has an upper surface at least substantially level with an upper surface of the metallic plate, an inner end connected to the metallic plate at one of the peripheral edges, and an outer end horizontally displaced from the one peripheral edge. The metallic connecting line has a width much smaller than the width of the one peripheral edge of the metallic plate and has length greater than the width of the one peripheral edge. The upper metallic via has a bottom end in contact with the metallic connecting line at a location that is horizontally displaced from the one peripheral edge by at least about 3 microns (μm).
24 Citations
7 Claims
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1. A semiconductor chip, comprising:
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a plurality of active semiconductor devices; a dielectric material overlying the active semiconductor devices; a plurality of metallic interconnects insulated and supported by said dielectric material, at least some of said conductive interconnects including; a metallic plate having an upper surface, a lower surface, and a plurality of peripheral edges extending between said upper surface and said lower surface, said upper surface defining a horizontally extending plane, said metallic gate having a width in a widthwise direction, a length in a lengthwise direction, and a thickness in a direction of a height of said upper surface from said lower surface; a metallic connecting line having an upper surface at least substantially level with said upper surface of said metallic plate, an inner end connected to said metallic plate at one of said peripheral edges, and an outer end horizontally displaced from said one peripheral edge, said metallic connecting line having a width much smaller than said width of said metallic plate and a length greater than said width of said metallic plate; a metal feature disposed at a wiring level higher than said metallic connecting line; and an upper metallic via connected with said metal feature and extending through said dielectric material, said upper metallic via having a bottom end in contact with said metallic connecting line at a location horizontally displaced from said one peripheral edge by at least about 3 microns (μ
m). - View Dependent Claims (2, 3, 4, 5)
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- 6. The semiconductor chip as claimed in claimed 1, wherein said metallic plate has a plurality of dielectric filled openings extending vertically between said upper surface and said lower surface.
Specification