Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus

• US 7,642,038 B2
• Filed: 03/22/2005
• Issued: 01/05/2010
• Est. Priority Date: 03/24/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fujii, Gen
• Primary Examiner(s): Chea; Thorl
• Application Number:
  US11/085,274
• Publication Number:
  US 20050221203A1
• Time in Patent Office: 1,750 Days
• Field of Search: 430/5, 430/311, 430/319, 430/320, 430/329, 430/631, 349/111, 349/138
• US Class Current: 430/311
• CPC Class Codes: G03F 7/0043 Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof G03F7/0044 takes precedence
• CPC Class Codes: G03F 7/201 characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
• CPC Class Codes: H01L 21/28008 Making conductor-insulator-semiconductor electrodes
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

To provide a display device which can be manufactured with higher efficiency in the use of material through a simplified manufacturing process, and a method for manufacturing the display device. Another object is to provide a technique by which patterns of a wiring the like which constitutes the display device can be formed to a desired shape with good control. In a method for forming a pattern according to the present invention, a mask is formed over a light-transmitting substrate; a first region including a photocatalyst is formed over the substrate and the mask; the photocatalyst is irradiated with light through the substrate to modify a part of the first region; a second region is formed; and a composition containing a pattern forming material is discharged to the second region, thus, a pattern is formed. The mask does not transmit light.

Claims

1. A method for forming a pattern, comprising the steps of:

forming a mask over a light-transmitting substrate;

forming a first region including a photocatalyst over the light-transmitting substrate and the mask;

forming a material containing a fluorocarbon chain over the photocatalyst;

irradiating the photocatalyst and the material containing the fluorocarbon chain with light through the light-transmitting substrate to modify a part of a surface of the material containing the fluorocarbon chain which is to be a second region; and

discharging a conductive composition containing a pattern forming material to the second region to form a pattern,

wherein the mask does not transmit the light.

2. A method according to claim 1, wherein titanium oxide is used as the photocatalyst to form the first region.

3. A method according to claim 1, wherein a surface of the material containing the fluorocarbon chain is modified so that the second region has higher wettability with the composition than the first region.

4. A method for manufacturing a thin film transistor, comprising the steps of:

forming a first conductive layer over a light-transmitting substrate;

forming an insulating layer over the light-transmitting substrate and the first conductive layer;

forming a first region including a photocatalyst over the insulating layer;

forming a material containing a fluorocarbon chain over the photocatalyst;

irradiating the photocatalyst and the material containing the fluorocarbon chain with light through the light-transmitting substrate to modify a part of a surface of the material containing the fluorocarbon chain which is to be a second region; and

discharging a composition containing a conductive material to the second region to form a second conductive layer,

wherein the first conductive layer does not transmit light.

5. A method according to claim 4, wherein titanium oxide is used as the photocatalyst to form the first region.

6. A method according to claim 4, wherein a surface of the material containing the fluorocarbon chain is modified so that the second region has higher wettability with the composition than the first region.

7. A method according to claim 4, wherein the first conductive layer is formed as a gate electrode layer and the second conductive layer is formed as a source electrode layer and a drain electrode layer.

8. A method for forming a pattern, comprising the steps of:

forming a mask over a light-transmitting substrate;

forming a first region including a photocatalyst over the light-transmitting substrate and the mask;

forming a material containing a fluorocarbon chain over the photocatalyst;

irradiating the photocatalyst and the material containing the fluorocarbon chain with light through the light-transmitting substrate to modify a part of a surface of the material containing the fluorocarbon chain which is to be a second region;

discharging a conductive composition containing a pattern forming material to the second region to form a pattern; and

removing a part of the first region including the photocatalyst and a part of the material containing the fluorocarbon chain,

wherein the mask does not transmit the light.

9. A method according to claim 8, wherein titanium oxide is used as the photocatalyst to form the first region.

10. A method according to claim 8, wherein a surface of the material containing the fluorocarbon chain is modified so that the second region has higher wettability with the composition than the first region.

11. A method for manufacturing a thin film transistor, comprising the steps of:

forming a first conductive layer over a light-transmitting substrate;

forming an insulating layer over the light-transmitting substrate and the first conductive layer;

forming a first region including a photocatalyst over the insulating layer;

forming a material containing a fluorocarbon chain over the photocatalyst;

irradiating the photocatalyst and the material containing the fluorocarbon chain with light through the light-transmitting substrate to modify a part of a surface of the material containing the fluorocarbon chain which is to be a second region;

discharging a composition containing a conductive material to the second region to form a second conductive layer; and

removing a part of the first region including the photocatalyst and a part of the material containing the fluorocarbon chain,

wherein the first conductive layer does not transmit light.

12. A method according to claim 11, wherein titanium oxide is used as the photocatalyst to form the first region.

13. A method according to claim 11, wherein a surface of the material containing the fluorocarbon chain is modified so that the second region has higher wettability with the composition than the first region.

14. A method according to claim 11, wherein the first conductive layer is formed as a gate electrode layer and the second conductive layer is formed as a source electrode layer and a drain electrode layer.