LED bonding structures and methods of fabricating LED bonding structures
First Claim
Patent Images
1. A method of fabricating an LED comprising:
- providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad formed on the ohmic contact, the bond pad having a total volume less than about 3×
10−
5 mm3;
conductively joining the LED chip to a submount.
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Abstract
A method is disclosed for fabricating an LED The method includes providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad formed on the ohmic contact. The bond pad has a total volume less than about 3×10−5 mm3. The LED chip is bonded to a submount via thermocompression or thermosonic bonding.
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Citations
12 Claims
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1. A method of fabricating an LED comprising:
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providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad formed on the ohmic contact, the bond pad having a total volume less than about 3×
10−
5 mm3;conductively joining the LED chip to a submount. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification