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LED bonding structures and methods of fabricating LED bonding structures

  • US 7,642,121 B2
  • Filed: 11/11/2008
  • Issued: 01/05/2010
  • Est. Priority Date: 04/28/2004
  • Status: Active Grant
First Claim
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1. A method of fabricating an LED comprising:

  • providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad formed on the ohmic contact, the bond pad having a total volume less than about 3×

    10

    5
    mm3;

    conductively joining the LED chip to a submount.

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