Multi-step anneal of thin films for film densification and improved gap-fill
First Claim
1. A method of annealing a substrate comprising a trench containing a dielectric material, the method comprising:
- forming the dielectric material on the substrate with chemical vapor deposition by reacting a silicon-containing process gas and an oxidizer-containing process gas, wherein a seam remains within the trench following the operation of forming the dielectric material;
annealing the substrate at a first temperature of about 200°
C. to about 800°
C. in a first atmosphere comprising an oxygen containing gas to heal the seam; and
annealing the substrate at a second temperature of about 800°
C. to about 1400°
C. in an inert, noble, or ammonia gas atmosphere lacking oxygen.
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Abstract
A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.
177 Citations
26 Claims
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1. A method of annealing a substrate comprising a trench containing a dielectric material, the method comprising:
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forming the dielectric material on the substrate with chemical vapor deposition by reacting a silicon-containing process gas and an oxidizer-containing process gas, wherein a seam remains within the trench following the operation of forming the dielectric material; annealing the substrate at a first temperature of about 200°
C. to about 800°
C. in a first atmosphere comprising an oxygen containing gas to heal the seam; andannealing the substrate at a second temperature of about 800°
C. to about 1400°
C. in an inert, noble, or ammonia gas atmosphere lacking oxygen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 23, 24, 25)
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18. A method of annealing a substrate comprising a trench containing a dielectric material, the method comprising:
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depositing the dielectric material in the trench using chemical vapor depositions, wherein a seam remains within the trench following the operation of forming the dielectric material; annealing the substrate at a first temperature of about 400°
C. to about 800°
C. in the presence of an oxygen containing gas to heal the seam;purging the oxygen containing gas away from the substrate; and raising the substrate to a second temperature from about 900°
C. to about 1100°
C. to further anneal the substrate in an inert, noble, or ammonia gas atmosphere that lacks oxygen. - View Dependent Claims (19, 20, 21, 22)
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26. A method of forming and annealing a dielectric material in a substrate trench, the method comprising:
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forming the dielectric material on the substrate with chemical vapor reacting tetraethoxysilane with ozone, wherein a seam remains within the trench following the operation of forming the dielectric material; annealing the substrate at a first temperature of about 200°
C. to about 800°
C. in a first atmosphere comprising an oxygen containing gas to heal the seam; andannealing the substrate at a second temperature of about 800°
C. to about 1400°
C. in an inert, noble, or ammonia gas atmosphere lacking oxygen.
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Specification