Rapid thermal processing using energy transfer layers

• US 7,642,205 B2
• Filed: 04/08/2005
• Issued: 01/05/2010
• Est. Priority Date: 04/08/2005
• Status: Active Grant

• Current Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area), BeiJing E-Town Semiconductor Technology Co., Ltd.
• Original Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Inventors: Timans, Paul J.
• Primary Examiner(s): Landau; Matthew C
• Assistant Examiner(s): Nicely; Joseph C
• Application Number:
  US11/102,496
• Publication Number:
  US 20060228897A1
• Time in Patent Office: 1,733 Days
• Field of Search: 438795-799, 438/515, 438517-522, 438/530, 438/532, 438/535, 438/537, 438540-550, 438/558, 438566-567, 438/715, 438/759, 438/778, 438/780, 438/781
• US Class Current: 438/795
• CPC Class Codes: H01L 21/67115 mainly by radiation

Abstract

A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.

Claims

1. In an overall multi-step technique for processing a semiconductor wafer, a method that is performed for annealing said wafer in a process chamber as an intermediate part of the overall multi-step technique, said method comprising:

applying an energy transfer layer to at least a portion of said wafer;

exposing said wafer to an energy source in said process chamber through the energy transfer layer to anneal the wafer in order to change at least one characteristic of the wafer to a modified characteristic, and where said exposing subjects the wafer to a thermal profile having at least a first elevated temperature event and such that said energy transfer layer influences at least one part of the thermal profile during the anneal and an initial portion of said exposing subjects said wafer to an inert gas ambient; and

removing said energy transfer layer, while said wafer remains in said process chamber, at least sufficiently for subjecting the wafer to a subsequent step and initiating said removing during said exposing by introducing a reactive gas ambient into said process chamber.

2. The method of claim 1 wherein said reactive gas ambient is selected as at least one member of the group consisting of oxygen containing gases and halogen containing gases.

3. The method of claim 1 wherein said removing further influences said thermal profile.

4. In an overall multi-step technique for processing a semiconductor wafer, a method that is performed for annealing said wafer in a process chamber as an intermediate part of the overall multi-step technique, said method comprising:

applying an energy transfer layer to at least a portion of said wafer by initially forming a film of a carbon containing compound and, thereafter, treating said film to increase a fractional carbon content thereof to form said energy transfer layer prior to said exposing such that the energy transfer layer is oxidizable;

exposing said wafer to an energy source in said process chamber through the energy transfer layer to anneal the wafer in order to change at least one characteristic of the wafer to a modified characteristic, and where said exposing subjects the wafer to a thermal profile having at least a first elevated temperature event and such that said energy transfer layer influences at least one part of the thermal profile during the anneal; and

removing said energy transfer layer, while said wafer remains in said process chamber, at least sufficiently for subjecting the wafer to a subsequent step and said removing includes causing said energy transfer layer to oxidize during said exposing to modify the thermal profile.

5. In an overall multi-step technique for processing a semiconductor wafer, a method that is performed for annealing said wafer in a process chamber as an intermediate part of the overall multi-step technique, said method comprising:

applying an energy transfer layer to at least a portion of said wafer;

exposing said wafer to an energy source in said process chamber through the energy transfer layer to anneal the wafer in order to change at least one characteristic of the wafer to a modified characteristic, and where said exposing subjects the wafer to a thermal profile having at least a first elevated temperature event and such that said energy transfer layer influences at least one part of the thermal profile during the anneal and said thermal profile includes a drop in temperature of said wafer subsequent to said first elevated temperature event and, thereafter, an additional elevated temperature event is produced; and

removing said energy transfer layer responsive to said additional elevated temperature event, while said wafer remains in said process chamber, at least sufficiently for subjecting the wafer to a subsequent step.

6. In an overall multi-step technique for processing a semiconductor wafer, a method that is performed for heat treating said wafer in a process chamber as an intermediate part of the overall multi-step technique, said method comprising:

applying a material layer to at least a portion of said wafer; and

exposing said material layer to an energy source in said process chamber during a thermal process that changes at least one characteristic of the wafer and which exposing causes the material layer to decompose into at least two by-products thereby releasing thermal energy that further changes said characteristic.

7. The method of claim 6 wherein a predetermined temperature event causes the removal to initiate.

8. The method of claim 7 wherein the predetermined temperature event is a pulse of heat that causes a rate at which the removal takes place to increase.