Semiconductor device
First Claim
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1. A semiconductor device, comprising:
- a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, or cadmium-lead; and
a gate dielectric positioned between a gate electrode and the channel.
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Abstract
One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.
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Citations
30 Claims
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1. A semiconductor device, comprising:
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a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, or cadmium-lead; and a gate dielectric positioned between a gate electrode and the channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device, comprising:
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a drain electrode; a source electrode; means for carrying electron flow to electrically couple the drain electrode and the source electrode, wherein the means for carrying electron flow includes one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, or cadmium-lead; and a gate electrode separated from the channel by a gate dielectric. - View Dependent Claims (19, 20)
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21. A display device, comprising:
a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including; a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more of a metal oxide including;
zinc-germanium oxide, zinc-lead oxide, cadmium-germanium oxide, cadmium-tin oxide, cadmium-lead oxide;a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
Specification