Rotational MEMS device having piezo-resistor sensor

• US 7,642,576 B2
• Filed: 09/20/2007
• Issued: 01/05/2010
• Est. Priority Date: 01/15/2007
• Status: Expired due to Fees

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Choi, U-hyuk, Shin, Seong-ho, Cho, Jin-woo, Ko, Young-chul
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US11/858,183
• Publication Number:
  US 20080168670A1
• Time in Patent Office: 838 Days
• Field of Search: 257/254, 257/418, 338/22.SD, 733/350.5
• US Class Current: 257/254
• CPC Class Codes: G01D 5/185 using piezoelectric sensors
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: G02B 6/359 of the position of the moving element itself during switching, i.e. without monitoring the switched beams

Abstract

A rotational micro-electromechanical system (MEMS) having a piezo-resistor sensor is provided. The rotational MEMS device includes a pair of torsion springs that support a stage, four resistors, at least one of the resistors being formed along a center axis of the torsion springs, and electrical signal cables connected to the four resistors, wherein at least one of the torsion springs is formed in a <100> direction on an n-type silicon substrate having a (100) plane, and the resistors formed on the at least one of the torsion springs are formed in a <110> group direction.

Claims

1. A rotational micro-electromechanical system (MEMS) device comprising:

a pair of torsion springs which support a stage;

four resistors, at least one of the resistors being formed along a center axis of at least one of the torsion springs; and

a plurality of electrical signal cables connected to the four resistors,

wherein the at least one of the torsion springs is formed in a <

100>

direction on an n-type silicon substrate having a (100) plane, and the at least one of the resistors formed on the at least one of the torsion springs are formed in a <

100>

group direction,

wherein the four resistors are separated from each other, and

wherein each of the plurality of electrical signal cables is separately connected to one end of the four resistors.

2. The rotational MEMS device of claim 1, wherein the resistors are doped with a p-type impurity.

3. The rotational MEMS device of claim 2, wherein the p-type impurity is boron.

4. The rotational MEMS device of claim 3, wherein the resistors on the at least one of the torsion springs are formed in a direction perpendicular to each other.

5. The rotational MEMS device of claim 4, wherein the four resistors are disposed on the at least one of the torsion springs in a W shape.

6. The rotational MEMS device of claim 1, wherein the four resistors are arranged to form a Wheatstone Bridge.

7. The rotational MEMS device of claim 1, wherein the least one of the four resistors formed along a center axis of the torsion spring is rotated around the longitudinal direction of the torsion spring.

8. A rotational micro-electromechanical system (MEMS) device comprising:

a pair of torsion springs which support a stage;

a cross shaped resistor defining four ends and being formed along a center axis of at least one of the torsion springs; and

a plurality of electrical signal cables,

wherein separate electrical signal cables are each respectively connected to each the four ends of the resistor,

wherein the torsion springs are formed on an n-type silicon substrate having a (100) plane, and at least two ends of the resistor which are opposite to each other are formed in a <

100>

direction, and two other ends of the resistor which are opposite to each other are formed perpendicularly to the <

100>

direction.

9. The rotational MEMS device of claim 8, wherein the resistor is doped with a p-type impurity.

10. The rotational MEMS device of claim 8, wherein a reference voltage is applied to the at least two ends of the resistor formed in the <

100>

direction.

11. The rotational MEMS device of claim 8, wherein the cross shaped resistor is rotated around the longitudinal direction of the torsion spring.

12. The rotational MEMS device of claim 9, wherein the p-type impurity is boron.