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Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same

  • US 7,642,578 B2
  • Filed: 12/16/2005
  • Issued: 01/05/2010
  • Est. Priority Date: 03/24/2005
  • Status: Active Grant
First Claim
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1. A field effect transistor (FET), comprising:

  • a semiconductor substrate;

    source and drain regions on the semiconductor substrate, the source and drain regions comprising a stacked structure of a silicon germanium layer and a silicon layer; and

    a plurality of FET channel regions coupled between the source and drain regions, the FET channel regions having a substantially circular cross-sectional shape, the FET channel regions being trimmed to a desired dimension such that a front surface of at least one of the FET channel regions is offset with respect to a front surface of the source and drain regions in a direction normal to the front surface of the source and drain regions; and

    a protruding portion of the semiconductor substrate in the gate region beneath the FET channel region.

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