Flat panel display device and method of fabricating the same
First Claim
1. A flat panel display device, comprising:
- a substrate including a first region on which an organic light emitting diode and a thin film transistor are formed and a second region on which a capacitor is formed;
a semiconductor layer including source and drain regions on the first region;
a first capacitor electrode formed on the second region;
a gate insulating layer formed on the substrate;
a gate electrode formed on the first region on the gate insulating layer;
a second capacitor electrode formed on the second region;
an interlayer insulating layer formed on the substrate;
source and drain electrodes formed on the first region on the interlayer insulating layer and connected with the semiconductor layer through first and second contact holes;
a first power voltage line formed on the second region connected with the second capacitor electrode through a third contact hole; and
a third capacitor electrode formed on the second region connected with the first capacitor electrode through a fourth contact hole, and having a different area from the first capacitor electrode.
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Accused Products
Abstract
A flat panel display device including a first region having an organic light emitting diode and a thin film transistor and a second region having a capacitor is disclosed. The capacitor comprises first, second, and third electrodes, where the area of a third capacitor electrode is reduced, thereby ensuring a distance between a first power voltage line and the third capacitor electrode. The total area of the capacitor is compensated by increasing the area of the first capacitor electrode. Thus, the area of the third capacitor electrode is reduced while the total capacitance of the capacitor is maintained, thereby preventing a dark spot caused by a short circuit between the first power voltage line and the third capacitor electrode.
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Citations
10 Claims
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1. A flat panel display device, comprising:
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a substrate including a first region on which an organic light emitting diode and a thin film transistor are formed and a second region on which a capacitor is formed; a semiconductor layer including source and drain regions on the first region; a first capacitor electrode formed on the second region; a gate insulating layer formed on the substrate; a gate electrode formed on the first region on the gate insulating layer; a second capacitor electrode formed on the second region; an interlayer insulating layer formed on the substrate; source and drain electrodes formed on the first region on the interlayer insulating layer and connected with the semiconductor layer through first and second contact holes; a first power voltage line formed on the second region connected with the second capacitor electrode through a third contact hole; and a third capacitor electrode formed on the second region connected with the first capacitor electrode through a fourth contact hole, and having a different area from the first capacitor electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification