Capped and chambered pressure sensor
First Claim
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1. A pressure sensor comprising:
- a substrate assembly having a silicon substrate, a CMOS layer deposited on the silicon substrate, a conductive layer deposited on the CMOS layer; and
a protective passivation layer deposited on the conductive layer;
a conductive membrane extending from the substrate assembly and spaced from the conductive layer, the conductive membrane defining a plurality of apertures; and
a cap extending from the substrate assembly to cover the membrane.
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Abstract
The present invention relates to a pressure sensor. The pressure sensor includes a substrate assembly. The substrate assembly defines closed channels and includes a conductive layer. A conductive membrane extends from the substrate assembly and is spaced from the conductive layer. The conductive membrane defines a plurality of apertures. A cap extends from the substrate assembly to cover the membrane.
20 Citations
6 Claims
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1. A pressure sensor comprising:
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a substrate assembly having a silicon substrate, a CMOS layer deposited on the silicon substrate, a conductive layer deposited on the CMOS layer; and
a protective passivation layer deposited on the conductive layer;a conductive membrane extending from the substrate assembly and spaced from the conductive layer, the conductive membrane defining a plurality of apertures; and a cap extending from the substrate assembly to cover the membrane. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification