Systems and methods for creating crystallographic-orientation controlled poly-silicon films
First Claim
1. A method of processing a semiconductor film on a substrate, the method comprising:
- providing a textured semiconductor film comprising crystal grains having a crystallographic orientation predominantly in one direction present below the surface of the semiconductor film and near the interface between the substrate and the semiconductor film; and
generating a microstructure using laser-induced lateral crystallization for providing location-controlled growth of said crystal grains orientated in said crystallographic orientation, wherein the crystallization is initiated within the bulk of the textured semiconductor film near the interface between the substrate and the semiconductor film.
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Abstract
In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation.
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19 Claims
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1. A method of processing a semiconductor film on a substrate, the method comprising:
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providing a textured semiconductor film comprising crystal grains having a crystallographic orientation predominantly in one direction present below the surface of the semiconductor film and near the interface between the substrate and the semiconductor film; and generating a microstructure using laser-induced lateral crystallization for providing location-controlled growth of said crystal grains orientated in said crystallographic orientation, wherein the crystallization is initiated within the bulk of the textured semiconductor film near the interface between the substrate and the semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification