Display device

• US 7,646,022 B2
• Filed: 05/09/2006
• Issued: 01/12/2010
• Est. Priority Date: 09/04/1996
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Teramoto, Satoshi, Zhang, Hongyong
• Primary Examiner(s): Jackson, Jr.; Jerome
• Assistant Examiner(s): Ho; Anthony
• Application Number:
  US11/382,412
• Publication Number:
  US 20060192201A1
• Time in Patent Office: 1,344 Days
• Field of Search: 257/59, 257/72
• US Class Current: 257/72
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer

Abstract

The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

Claims

1. An active matrix display device comprising:

a thin film transistor comprising a silicon layer formed over a substrate;

a source line and a gate line intersecting each other and electrically connected to the thin film transistor;

an insulating film comprising an organic resin formed over the thin film transistor, the source line and the gate line;

a metal film formed over the substrate, and overlapped with the source line;

a pixel electrode formed over the insulating film and electrically connected to the thin film transistor; and

an electrode pattern comprising a transparent conductive material formed over the insulating film,

wherein the electrode pattern overlaps with the source line,

wherein the electrode pattern extends along the source line,

wherein the electrode pattern is isolated from the pixel electrode, and

wherein the metal film is isolated from the gate line, the source line, and the pixel electrode.

2. An active matrix display device according to claim 1, wherein both of the pixel electrode and the electrode pattern comprise ITO.

3. An active matrix display device according to claim 1, wherein the pixel electrode and the electrode pattern are formed in different layers.

4. An active matrix display device according to claim 1, wherein the metal film comprises titanium or chromium.

5. An active matrix display device comprising:

a thin film transistor comprising a silicon layer formed over a substrate;

a source line and a gate line intersecting each other and electrically connected to the thin film transistor;

an insulating film comprising an organic resin formed over the thin film transistor, the source line and the gate line;

a metal film formed over the substrate and overlapped with the source line;

a pixel electrode formed over the insulating film and electrically connected to the thin film transistor; and

an electrode pattern comprising a transparent conductive material formed over the insulating film,

wherein the electrode pattern overlaps with both of the source line and the gate line,

wherein the electrode pattern extends along both of the source line and the gate line,

wherein the electrode pattern is isolated from the pixel electrode, and

wherein the metal film is isolated from the gate line, the source line, and the pixel electrode.

6. An active matrix display device according to claim 5, wherein both of the pixel electrode and the electrode pattern comprise ITO.

7. An active matrix display device according to claim 5, wherein the pixel electrode and the electrode pattern are formed in different layers.

8. An active matrix display device according to claim 5, wherein the metal film comprises titanium or chromium.

9. An active matrix display device comprising:

a thin film transistor comprising a silicon layer formed over a substrate;

a source line and a gate line intersecting each other and electrically connected to the thin film transistor;

an insulating film comprising an organic resin formed over the thin film transistor, the source line and the gate line;

a metal film formed over the substrate,

a pixel electrode formed over the insulating film, and electrically connected to the thin film transistor, and overlapping with the metal film; and

an electrode pattern comprising a transparent conductive material formed over the insulating film,

wherein the electrode pattern overlaps with the source line,

wherein the electrode pattern extends along the source line,

wherein the electrode pattern is isolated from the pixel electrode, and

wherein the metal film is isolated from the gate line, the source line, and the pixel electrode.

10. An active matrix display device according to claim 9, wherein both of the pixel electrode and the electrode pattern comprise ITO.

11. An active matrix display device according to claim 9, wherein the pixel electrode and the electrode pattern are formed in different layers.

12. An active matrix display device according to claim 9, wherein the metal film comprises titanium or chromium.

13. An active matrix display device comprising:

a thin film transistor comprising a silicon layer formed over a substrate;

a source line and a gate line intersecting each other and electrically connected to the thin film transistor;

an insulating film comprising an organic resin formed over the thin film transistor, the source line and the gate line;

a metal film formed over the substrate;

a pixel electrode formed over the insulating film, electrically connected to the thin film transistor, and overlapping with the metal film; and

an electrode pattern comprising a transparent conductive material formed over the insulating film,

wherein the electrode pattern overlaps with both of the source line and the gate line,

wherein the electrode pattern extends along both of the source line and the gate line,

wherein the electrode pattern is isolated from the pixel electrode, and

wherein the metal film is isolated from the gate line, the source line, and the pixel electrode.

14. An active matrix display device according to claim 13, wherein both of the pixel electrode and the electrode pattern comprise ITO.

15. An active matrix display device according to claim 13, wherein the pixel electrode and the electrode pattern are formed in different layers.

16. An active matrix display device according to claim 13, wherein the metal film comprises titanium or chromium.