Systems and methods for producing white-light light emitting diodes
DCFirst Claim
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1. A vertical light-emitting diode (LED) structure, comprising:
- a metal substrate deposited adjacent to a p-electrode;
a p-GaN layer disposed above the p-electrode;
an active region for emitting light disposed above the p-GaN layer;
an n-GaN layer disposed above the active region; and
a wafer-level phosphor layer and an n-electrode disposed above the n-GaN layer, wherein the phosphor layer is parallel to the n-GaN layer.
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Abstract
A vertical light emitting diode (LED) includes a metal substrate; a p-electrode coupled to the metal substrate; a p-contact coupled to the p-electrode; a p-GaN portion coupled to the p electrode; an active region coupled to the p-GaN portion; an n-GaN portion coupled to the active region; and a phosphor layer coupled to the n-GaN.
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Citations
20 Claims
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1. A vertical light-emitting diode (LED) structure, comprising:
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a metal substrate deposited adjacent to a p-electrode; a p-GaN layer disposed above the p-electrode; an active region for emitting light disposed above the p-GaN layer; an n-GaN layer disposed above the active region; and a wafer-level phosphor layer and an n-electrode disposed above the n-GaN layer, wherein the phosphor layer is parallel to the n-GaN layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A vertical light-emitting diode (LED) structure, comprising:
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a metal substrate deposited adjacent to a p-electrode; a p-GaN layer disposed above the p-electrode; an active region for emitting light disposed above the p-GaN layer; an n-GaN layer disposed above the active region; a first wafer-level phosphor layer and an n-electrode disposed above the n-GaN layer, wherein the first phosphor layer is parallel to the n-GaN layer; and a second phosphor layer coupled to the first phosphor layer. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A vertical light-emitting diode (LED) structure, comprising:
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a metal substrate deposited adjacent to a p-electrode; a p-GaN layer disposed above the p-electrode; an active region for emitting light disposed above the p-GaN layer; an n-GaN layer disposed above the active region; a first wafer-level phosphor layer and an n-electrode disposed above the n-GaN layer, wherein the first phosphor layer is parallel to the n-GaN layer; and a second phosphor layer coupled to the first phosphor layer, wherein the first phosphor layer has a phosphor composition that is photosensitive to a different color than a phosphor composition of the second phosphor layer.
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Specification