Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition

• US 7,648,690 B2
• Filed: 10/02/2008
• Issued: 01/19/2010
• Est. Priority Date: 02/04/2005
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: Weeks, Keith Doran, Bauer, Matthias, Tomasini, Pierre, Cody, Nyles
• Primary Examiner(s): Kunemund; Robert M
• Assistant Examiner(s): Rao; G. Nagesh
• Application Number:
  US12/244,724
• Publication Number:
  US 20090026496A1
• Time in Patent Office: 474 Days
• Field of Search: 423/324, 423/345, 423/348, 423/349, 117/928, 117/935
• US Class Current: 423/324
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/22 characterised by the deposition of inorganic material, other than metallic material
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/32 Carbides
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02636 Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/32056 Deposition of conductive or semi-conductive organic layers H01L21/32058 takes precedence
• CPC Class Codes: H01L 21/3215 Doping the layers
• CPC Class Codes: H01L 29/165 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/66628 recessing the gate by forming single crystalline semiconductor material at the source or drain location
• CPC Class Codes: H01L 29/66636 : with source or drain recessed by etching or first recessed by etching and then refilled
• CPC Class Codes: H01L 29/7834 : with a non-planar structure, e.g. the gate or the source or the drain being non-planar
• CPC Class Codes: H01L 29/7848 : the means being located in the source/drain region, e.g. SiGe source and drain

Abstract

Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

Claims

1. A doped single crystalline silicon film comprising substitutional carbon, the single crystalline silicon film having a lattice spacing of 5.38 Å

or less and less than about 0.3 atomic % non-substitutional carbon.

2. The doped single crystalline silicon film of claim 1, wherein the lattice spacing is 5.36 Å

or less.

3. The doped single crystalline silicon film of claim 1, wherein the lattice spacing is 5.34 Å

or less.

4. The doped single crystalline silicon film of claim 1, further comprising a dopant selected from the group consisting of phosphorous and arsenic.

5. The doped single crystalline silicon film of claim 4, having a resistivity of about 1.0 mΩ

·

cm or less.

6. The doped single crystalline silicon film of claim 4, having a resistivity of about 0.7 mΩ

·

cm or less.

7. A single crystalline silicon film comprising 2.4 atomic % or greater substitutional carbon and less than about 0.3 atomic % non-substitutional carbon, as determined by x-ray diffraction and Vegard'"'"'s Law.

8. The single crystalline silicon film of claim 7, comprising 2.7 atomic % or greater substitutional carbon.

9. The single crystalline silicon film of claim 7, comprising 3.0 atomic % or greater substitutional carbon.

10. The single crystalline silicon film of claim 7, comprising less than about 0.2 atomic % non-substitutional carbon.

11. The single crystalline silicon film of claim 7, having a tensile stress of about 1.0 GPa or greater.

12. The single crystalline silicon film of claim 11, having a tensile stress of about 1.5 GPa or greater.

13. The single crystalline silicon film of claim 11, having a tensile stress of about 1.7 GPa or greater.

14. The single crystalline silicon film of claim 11, having a tensile stress of about 1.85 GPa or greater.

15. The single crystalline silicon film of claim 11, having a tensile stress of about 2.0 GPa or greater.

16. The single crystalline silicon film of claim 7, having a film thickness of about 200 nm or less.

17. The single crystalline silicon film of claim 7, further comprising an underlying single crystalline silicon substrate.

18. The single crystalline silicon film of claim 17, wherein the underlying single crystalline silicon substrate has a lattice spacing of about 5.43 Å

.

19. The single crystalline silicon film of claim 17, recessed in the underlying single crystalline silicon substrate.

20. A single crystalline silicon film comprising 3.0 atomic % or greater substitutional carbon, as determined by x-ray diffraction and Vegard'"'"'s Law.

21. The single crystalline silicon film of claim 20, comprising less than about 0.2 atomic % non-substitutional carbon.

22. The single crystalline silicon film of claim 20, having a tensile stress of about 1.0 GPa or greater.

23. The single crystalline silicon film of claim 20, having a tensile stress of about 1.5 GPa or greater.

24. The single crystalline silicon film of claim 20, having a tensile stress of 1.7 GPa or greater.

25. The single crystalline silicon film of claim 20, having a tensile stress of 1.85 GPa or greater.

26. The single crystalline silicon film of claim 20, further comprising an underlying single crystalline silicon substrate.

27. The single crystalline silicon film of claim 25, wherein the underlying single crystalline silicon substrate has a lattice spacing of about 5.34 Å

.