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Semiconductor device and method of forming embedded passive circuit elements interconnected to through hole vias

  • US 7,648,911 B2
  • Filed: 05/27/2008
  • Issued: 01/19/2010
  • Est. Priority Date: 05/27/2008
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • creating a gap between a plurality of semiconductor die;

    depositing a first insulating material in the gap;

    removing a portion of the first insulating material to form a through hole via (THV);

    depositing conductive material in the THV;

    forming a second insulating layer over an active surface of the semiconductor die;

    forming a first passive circuit element over the second insulating layer; and

    singulating the semiconductor wafer through the gap to separate the semiconductor die.

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