Method of fabricating and repairing a short defect in LCD device having a residue pattern of a predetermined line width removed after forming photo-resist pattern through rear exposure

• US 7,649,609 B2
• Filed: 06/02/2006
• Issued: 01/19/2010
• Est. Priority Date: 06/30/2005
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: Yoo, Soon Sung, Cho, Heung Lyul
• Primary Examiner(s): HEYMAN, JOHN S
• Application Number:
  US11/445,193
• Publication Number:
  US 20070000431A1
• Time in Patent Office: 1,327 Days
• Field of Search: 349/54, 349/55, 349/192
• US Class Current: 349/192
• CPC Class Codes: G02F 1/136259 Repairing; Defects

Abstract

A method for repairing a short defect according to the present invention includes forming a first conductive pattern on a substrate, forming a photo-resist pattern on the first conductive pattern using a rear exposure for the first conductive pattern being shorted by a residue pattern, and removing the residue pattern exposed through the photo-resist pattern.

Claims

1. A method for repairing a short defect for a liquid crystal display device, comprising:

forming a first conductive pattern on a substrate;

forming a photo-resist pattern on the first conductive pattern using a rear exposure for the first conductive pattern being shorted by a residue pattern, wherein the residue pattern has a line width equal to or less than a resolution level of the rear exposure; and

removing the residue pattern exposed through the photo-resist pattern.

2. The method according to claim 1, wherein forming the photo-resist pattern includes:

coating a photo-resist on the first conductive pattern; and

forming the photo-resist pattern by rear-exposing the photo-resist.

3. A method of fabricating a liquid crystal display device, comprising:

forming a gate line and a common line on a substrate;

forming a photo-resist pattern on the gate line and the common line using a rear exposure for the gate line and the common line being shorted by a residue pattern, wherein the residue pattern has a line width not greater than a resolution level of the rear exposure; and

removing the residue pattern exposed through the photo-resist pattern.

4. The method according to claim 3, wherein forming the photo-resist pattern includes:

forming a photo-resist on a substrate where the gate line and the common line are formed; and

forming the photo-resist pattern by the rear exposure using the gate line and the common line as a mask.

5. The method according to claim 3, wherein the residue pattern has a line width equal to or less than about 4 μ

m.