Processing system and method for treating a substrate

• US 7,651,583 B2
• Filed: 06/04/2004
• Issued: 01/26/2010
• Est. Priority Date: 06/04/2004
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Laflamme, Arthur H Jr., Hamelin, Thomas, Wallace, Jay, Kent, Martin
• Primary Examiner(s): MOORE, KARLA A
• Application Number:
  US10/860,149
• Publication Number:
  US 20050269030A1
• Time in Patent Office: 2,062 Days
• Field of Search: 156/345.31, 156/345.32, 118/719, 414/939
• US Class Current: 156/345.31
• CPC Class Codes: H01L 21/67178 vertical arrangement
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67751 vertical transfer of a single workpiece

Abstract

A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH₃, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.

Claims

1. A processing system for trimming a feature on a substrate comprising:

a process chamber having a lower chamber portion that chemically alters exposed surface layers on a substrate, and an upper chamber portion that thermally treats said chemically altered surface layers on said substrate;

a lower wall temperature control unit coupled to said lower chamber portion and configured to control the temperature of said lower chamber portion;

an upper wall temperature control unit coupled to said upper chamber portion and configured to control the temperature of said upper chamber portion;

a gas injection system coupled to said lower chamber portion and configured to introduce one or more process gases to said lower chamber portion;

a gas distribution system temperature control unit coupled to said gas injection system and configured to control the temperature of said gas injection system;

a temperature controlled substrate holder fixedly mounted within said lower chamber portion and configured to support said substrate on an upper surface thereof in said lower chamber portion and control a temperature of said substrate when in contact with said temperature controlled substrate holder;

a substrate lift-pin assembly coupled to said temperature controlled substrate holder, and configured to vertically translate said substrate between said upper surface of said temperature controlled substrate holder and a transfer plane in said lower chamber portion;

a substrate lifting assembly, separate from said temperature controlled substrate holder, movably coupled to said process chamber, and configured to recede beneath said upper surface of said temperature-controlled substrate holder, isolate said lower chamber portion from said upper chamber portion via a chamber lip, support said substrate on a substrate lip at a peripheral edge of said substrate and transport said substrate between said lower chamber portion and said upper chamber portion, to and from said transfer plane, and to and from said upper surface of said temperature-controlled substrate holder; and

a pumping system coupled to said lower chamber portion and said upper chamber portion.

2. The processing system of claim 1, wherein said lower chamber portion is thermally insulated from said upper chamber portion.

3. The processing system of claim 2, wherein said thermal insulation comprises a thermal insulation plate.

4. The processing system of claim 3, wherein said thermal insulation plate provides a thermal barrier between said lower chamber portion and said upper chamber portion.

5. The processing system of claim 4, wherein said thermal insulation plate comprises at least one of Teflon, alumina, sapphire, and quartz.

6. The processing system of claim 1, wherein said lower chamber portion is vacuum isolated from said upper chamber portion.

7. The processing system of claim 6, wherein said vacuum isolation includes a gate valve for opening and closing an opening between said lower chamber portion and said upper chamber portion.

8. The processing system of claim 1, wherein said temperature controlled substrate holder comprises at least one of an electrostatic clamping system, a back-side gas supply system, and one or more temperature control elements.

9. The processing system of claim 1, wherein said temperature controlled substrate holder in said lower chamber portion includes one or more temperature control elements and said one or more temperature control elements comprise at least one of a cooling channel, a heating channel, a resistive heating element, a radiant lamp, and a thermo-electric device.

10. The processing system of claim 1, wherein said gas injection system comprises at least one gas distribution plenum.

11. The processing system of claim 1, wherein said gas injection system comprises one or more gas injection orifices.

12. The processing system of claim 1, wherein said one or more process gases comprises a first gas and a second gas different from said first gas.

13. The processing system of claim 1, wherein said one or more process gases comprise at least one of HF and NH₃.

14. The processing system of claim 13, wherein said one or more process gases further includes an inert gas.

15. The processing system of claim 14, wherein said inert gas includes a Noble gas.

16. The processing system of claim 1, wherein said upper chamber portion comprises:

a heating assembly configured to elevate the temperature of said substrate, and

a gas purge system configured to introduce a purge gas to said upper chamber portion.

17. The processing system of claim 16, wherein said heating assembly includes a radiant heating assembly.

18. The processing system of claim 17, wherein said radiant heating assembly includes an array of radiant lamps.

19. The processing system of claim 16, wherein said purge gas includes N₂.

20. The processing system of claim 1, wherein said substrate lifting assembly locates said substrate on said temperature-controlled substrate holder in said lower chamber portion for exposure to said one or more process gases when in a lowered position, and locates said substrate proximate a heating assembly in said upper chamber portion when in a raised position.

21. The processing system of in claim 1, wherein said process chamber is coupled to a manufacturing system.