Barrier film and laminated material, container for wrapping and image display medium using the same, and manufacturing method for barrier film

• US 7,651,594 B2
• Filed: 01/11/2005
• Issued: 01/26/2010
• Est. Priority Date: 04/18/2002
• Status: Active Grant

• Current Assignee: Dai Nippon Printing Company Limited
• Original Assignee: Dai Nippon Printing Company Limited
• Inventors: Kishimoto, Yoshihiro, Komada, Minoru
• Primary Examiner(s): Nguyen; Nam X
• Assistant Examiner(s): BERMAN, JASON
• Application Number:
  US11/032,970
• Publication Number:
  US 20050249898A1
• Time in Patent Office: 1,841 Days
• Field of Search: None
• US Class Current: 204/192.15
• CPC Class Codes: B32B 2307/7244 Oxygen barrier
• CPC Class Codes: B32B 2553/00 Packaging equipment or accessories not otherwise provided for
• CPC Class Codes: B32B 27/00 Layered products comprising a layer of synthetic resin fibrous or filamentary layer made of a synthetic resin B32B5/02; particulate layer made of a synthetic resin B32B5/16; foamed layer made of a synthetic resin B32B5/18
• CPC Class Codes: B32B 33/00 Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
• CPC Class Codes: C09K 2323/051 Inorganic, e.g. glass or silicon oxide
• CPC Class Codes: C23C 14/0676 Oxynitrides
• CPC Class Codes: C23C 14/10 Glass or silica
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/3143 composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: Y10T 428/1334 Nonself-supporting tubular film or bag [e.g., pouch, envelope, packet, etc.]
• CPC Class Codes: Y10T 428/1352 Polymer or resin containing [i.e., natural or synthetic]
• CPC Class Codes: Y10T 428/265 1 mil or less
• CPC Class Codes: Y10T 428/28 Web or sheet containing structurally defined element or component and having an adhesive outermost layer
• CPC Class Codes: Y10T 428/31667 Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Abstract

An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:140 to 170:20 to 40, peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1060 to 1090 cm⁻¹, a film density in a range of 2.6 to 2.8 g/cm³, and a distance between grains of 30 nm or shorter. Still more, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, has a composition wherein the barrier layer is a silicon oxi-nitride film, and the silicon oxi-nitride film has an atomic ratio in a range of Si:O:N:C=100:60 to 90:60 to 90:20 to 40, a maximum peak of infrared-ray absorption due to Si—O stretching vibration and Si—N stretching vibration is in a range of 820 to 930 cm⁻¹, a film density is in a range of 2.9 to 3.2 g/cm³, and a distance between grains is 30 nm or shorter.

Claims

1. A method for manufacturing a barrier film, comprising forming, as a barrier layer, a silicon oxi-nitride film having an atomic ratio of Si₁₀₀O_60-90N_60-90C_20-40, a maximum peak of infrared-ray absorption due to Si—

O stretching vibration and Si—

N stretching vibration is in a range of 820 to 930 cm<sup>−

1</sup>, a film density in a range of 2.9 to 3.2 g/cm³ and a distance between grains of 30 nm or shorter, on a substrate film which is composed of resin, using silicon nitride (Si₃N₄) having a sintered density of 60% or higher as a target, in the presence of an oxygen gas by a sputtering method.

2. The method for manufacturing a barrier film according to claim 1, wherein the sputtering method is a RF sputtering method.

5. The method for manufacturing a barrier film according to claim 1, wherein a resin layer is provided on the substrate film in advance, and the barrier layer is formed on the resin layer.

3. A method for manufacturing a barrier film, comprising forming, as a barrier layer, a silicon oxi-nitride film having an atomic ratio of Si₁₀₀O_60-90N_60-90C_20-40, a maximum peak of infrared-ray absorption due to Si—

O stretching vibration and Si—

N stretching vibration in a range of 820 to 930 cm<sup>−

1</sup>, a film density in a range of 2.9 to 3.2 g/cm³ and a distance between grains of 30 nm or shorter, on a substrate film which is composed of resin, using silicon having an electric resistivity of 0.2 Ω

cm or less as a target in the presence of an oxygen gas and a nitrogen gas by a sputtering method.

4. The method for manufacturing a barrier film according to claim 3, wherein the sputtering method is a dual magnetron sputtering method or a RF sputtering method.

6. The method for manufacturing a barrier film according to claim 3, wherein a resin layer is provided on the substrate film in advance, and the barrier layer is formed on the resin layer.