Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond

• US 7,651,725 B2
• Filed: 10/24/2007
• Issued: 01/26/2010
• Est. Priority Date: 02/11/1998
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Jeng, Shin-Puu, Yau, Wai-Fan, Liu, Kuowei, Yu, Yung-Cheng, Cheung, David
• Primary Examiner(s): Talbot; Brian K
• Application Number:
  US11/923,037
• Publication Number:
  US 20080044557A1
• Time in Patent Office: 825 Days
• Field of Search: 427/96.1, 427/97.7, 438/643, 438/653
• US Class Current: 427/97.7
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/7681 involving one or more buried masks
• CPC Class Codes: H01L 21/76828 thermal treatment
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76835 Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 21/76837 Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics

Abstract

A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH₃SiH₃, and N₂O.

Claims

1. A method for forming an integrated circuit structure, comprising:

depositing one or more layers, wherein at least one layer comprises a low dielectric constant material comprising silicon, oxygen, and carbon;

defining openings in the one or more layers;

lining the openings with a dielectric material comprising silicon, oxygen, and carbon; and

filling the openings with a conductive material.

2. A method for forming an integrated circuit structure, comprising:

depositing a plurality of conformal layers, wherein at least one conformal layer comprises a low dielectric constant material comprising silicon, oxygen, and carbon;

defining contact/via openings in the plurality of conformal layers;

lining the contact/via openings with a dielectric material comprising silicon, oxygen, and carbon; and

filling the contact/via openings with a conductive material.

3. A method for forming an integrated circuit structure, comprising:

depositing one or more layers, wherein at least one layer comprises a low dielectric constant material deposited by oxidizing an organo silane compound having the general structure

4. The method of claim 3, wherein the organo silane compound has the structure SiH_a(CH₃)_b(C₂H₅)_c(C₆H₅)_d, where a=1 to 3, b=0 to 3, c=0 to 3, d=0 to 3, and a+b+c+d=4, or the structure Si₂H_e(CH₃)_f(C₂H₅)_g(C₆H₅)_h, where e=1 to 5, f=0 to 5, g=0 to 5, h=0 to 5, and e+f+g+h=6.

5. The method of claim 3, wherein the organo silane compound has the structure SiH_n(CH₃)_4-n, where n=1 to 3, or the structure Si₂H_m(CH₃)_6-m, where m=1 to 5.

6. The method of claim 3, wherein the organo silane compound is methyl silane.