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Method for manufacturing semiconductor device

  • US 7,651,896 B2
  • Filed: 08/23/2007
  • Issued: 01/26/2010
  • Est. Priority Date: 08/30/2006
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device comprising:

  • forming a gate electrode and a gate insulating film over a substrate;

    forming a first semiconductor film over the gate insulating film;

    irradiating the first semiconductor film with a laser beam through a photomask including a shield, to form a groove by subliming the semiconductor film irradiated with the laser beam through a portion in which the shield is not formed, wherein the groove separates a region of an island-shaped semiconductor film to serve as an active layer and a region of a semiconductor film which does not function as the active layer;

    forming an insulating film over the island-shaped semiconductor film and the region which does not function as the active layer; and

    forming a source electrode and a drain electrode over the insulating film, the source electrode and the drain electrode being electrically connected to the island-shaped semiconductor film.

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