Method for manufacturing semiconductor device

• US 7,651,896 B2
• Filed: 08/23/2007
• Issued: 01/26/2010
• Est. Priority Date: 08/30/2006
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Honda, Tatsuya
• Primary Examiner(s): Coleman; W. David
• Assistant Examiner(s): SCARLETT, SHAKA S
• Application Number:
  US11/844,134
• Publication Number:
  US 20080057618A1
• Time in Patent Office: 887 Days
• Field of Search: 430/5, 438/742, 438/149, 438/700, 438/708, 438/709, 438/717, 438/718, 438/722, 438/754, 257/E21.305
• US Class Current: 438/149
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: Y10T 428/12917 Next to Fe-base component

Abstract

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming a gate electrode and a gate insulating film over a substrate;

forming a first semiconductor film over the gate insulating film;

irradiating the first semiconductor film with a laser beam through a photomask including a shield, to form a groove by subliming the semiconductor film irradiated with the laser beam through a portion in which the shield is not formed, wherein the groove separates a region of an island-shaped semiconductor film to serve as an active layer and a region of a semiconductor film which does not function as the active layer;

forming an insulating film over the island-shaped semiconductor film and the region which does not function as the active layer; and

forming a source electrode and a drain electrode over the insulating film, the source electrode and the drain electrode being electrically connected to the island-shaped semiconductor film.

2. A method for manufacturing the semiconductor device according to claim 1, wherein the gate electrode is formed in such a way that a shield for shielding a laser beam over a light-transmitting substrate is used as a photomask, a second semiconductor film formed as a first layer and a metal film formed as a second layer which are formed over a light-transmitting substrate are used as a source substrate, and the metal film is formed over the substrate as the gate electrode by subliming the second semiconductor film in such a way that the source substrate is irradiated with the laser beam through the photomask.

3. A method for manufacturing the semiconductor device according to claim 1, wherein the first semiconductor film is any one of a zinc compound semiconductor film and an oxide semiconductor film.

4. A method for manufacturing the semiconductor film according to claim 3, wherein the zinc compound semiconductor film comprises any one of zinc oxide, a mixed crystal semiconductor containing zinc oxide, and zinc sulfide.

5. A method for manufacturing the semiconductor device according to claim 2, wherein the second semiconductor film is any one of a zinc compound semiconductor film and an oxide semiconductor film.

6. A method for manufacturing the semiconductor film according to claim 5, wherein the zinc compound semiconductor film comprises any one of zinc oxide, a mixed crystal semiconductor containing zinc oxide, and zinc sulfide.