Method to form ultra high quality silicon-containing compound layers
First Claim
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1. A method for forming an integrated circuit, comprising:
- forming a layer of an insulating silicon compound by performing a plurality of chemical vapor deposition cycles in a reaction chamber, each cycle comprising;
first, depositing a silicon layer on a substrate by exposing the substrate to a silicon source, wherein depositing the silicon layer is performed under mass transport limited deposition conditions; and
second, reacting the silicon layer to form part of the layer of the insulating silicon compound, wherein trisilane is the silicon source used to deposit a first silicon layer on the substrate in a first performance of a cycle of the plurality of cycles, wherein the silicon-containing compound layer has a thickness non-uniformity of about 5% or less and a step coverage of about 80% or greater.
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Abstract
Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.
170 Citations
24 Claims
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1. A method for forming an integrated circuit, comprising:
forming a layer of an insulating silicon compound by performing a plurality of chemical vapor deposition cycles in a reaction chamber, each cycle comprising; first, depositing a silicon layer on a substrate by exposing the substrate to a silicon source, wherein depositing the silicon layer is performed under mass transport limited deposition conditions; and second, reacting the silicon layer to form part of the layer of the insulating silicon compound, wherein trisilane is the silicon source used to deposit a first silicon layer on the substrate in a first performance of a cycle of the plurality of cycles, wherein the silicon-containing compound layer has a thickness non-uniformity of about 5% or less and a step coverage of about 80% or greater. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming an insulating film, comprising:
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providing a substrate in a reaction chamber; forming a silicon film by exposing the substrate to a silicon source, wherein the silicon source for forming a first silicon film on the substrate, after loading the substrate, is trisilane, wherein the first silicon film is deposited on the substrate under mass transport limited deposition conditions; subsequently exposing the silicon film to a nitrogen source to form a silicon nitride film; and sequentially repeating forming the silicon film and subsequently exposing the silicon film to grow the silicon nitride film to a desired thickness, the silicon nitride film of the desired thickness having a thickness non-uniformity of about 5% or less and a step coverage of about 80% or greater. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A process of forming a silicon nitride layer on a substrate, comprising:
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loading a substrate having a crystalline silicon surface into a single substrate laminar flow process chamber; forming a silicon layer on the crystalline silicon surface by decomposing a silicon source comprising trisilane, wherein forming the silicon layer is performed under mass transport limited deposition conditions; and nitriding the silicon layer to form a silicon nitride layer by flowing a nitrogen source into the process chamber after forming the silicon layer, wherein the silicon nitride layer has a thickness non-uniformity of about 5% or less and a step coverage of about 80% or greater. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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23. A method of forming a silicon nitride film, comprising:
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providing a substrate in a reaction chamber; depositing a silicon nitride film on the substrate by performing a plurality of chemical vapor deposition cycles, each cycle comprising; chemical vapor depositing a silicon layer on the substrate under mass transport limited deposition conditions, the silicon layer having a thickness non-uniformity of about 5% or less and a step coverage of about 80% or greater, wherein a height of a top surface of the silicon layer over the substrate is greater than about a nitridation saturation depth, wherein the silicon precursor for the chemical vapor depositing is trisilane; and nitriding the silicon layer. - View Dependent Claims (24)
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Specification