Method for forming silicon-containing materials during a photoexcitation deposition process
First Claim
1. A method for forming a silicon material on a substrate, comprising:
- positioning a substrate within a process chamber;
exposing the substrate to a deposition gas comprising a silicon-containing precursor, an oxygen precursor, and a nitrogen precursor, wherein the silicon-containing precursor is at least one of tetraethoxysilane, alkoxysilane, or halosilane;
exposing the deposition gas to an energy beam derived from an ultraviolet (UV) source within the process chamber; and
depositing a silicon-containing material on the substrate, wherein the silicon-containing material is amorphous and comprises oxygen and nitrogen.
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Accused Products
Abstract
Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
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Citations
25 Claims
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1. A method for forming a silicon material on a substrate, comprising:
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positioning a substrate within a process chamber; exposing the substrate to a deposition gas comprising a silicon-containing precursor, an oxygen precursor, and a nitrogen precursor, wherein the silicon-containing precursor is at least one of tetraethoxysilane, alkoxysilane, or halosilane; exposing the deposition gas to an energy beam derived from an ultraviolet (UV) source within the process chamber; and depositing a silicon-containing material on the substrate, wherein the silicon-containing material is amorphous and comprises oxygen and nitrogen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for forming a silicon material on a substrate, comprising:
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positioning a substrate within a process chamber; exposing the substrate to a deposition gas comprising a silicon-containing precursor and an oxygen precursor, wherein the silicon-containing precursor is at least one of tetraethoxysilane, alkoxysilane, or halosilane; exposing the deposition gas to an energy beam derived from an ultraviolet (UV) source within the process chamber; and depositing a silicon oxide material on the substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for forming a silicon material on a substrate, comprising:
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positioning a substrate within a process chamber; exposing the substrate to a deposition gas comprising tetraethoxysilane and an oxygen precursor; exposing the deposition gas to an energy beam derived from an ultraviolet (UV) source within the process chamber; and depositing a silicon oxide material on the substrate. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification