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Power semiconductor devices and methods of manufacture

  • US 7,652,326 B2
  • Filed: 05/31/2006
  • Issued: 01/26/2010
  • Est. Priority Date: 05/20/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a drift region of a first conductivity type;

    a well region extending above the drift region and having a second conductivity type opposite the first conductivity type;

    an active trench extending into the drift region deeper than the well region, and having its sidewalls and bottom lined with dielectric material and substantially filled with a gate conductive layer;

    source regions having the first conductivity type formed in the well region adjacent the active trench;

    a body trench extending deeper than the well region and formed adjacent the well and it'"'"'s source region, the body trench being substantially filled with conductive material; and

    a layer of second concentration of the second conductivity type substantially surrounding the body trench;

    wherein the active trench further includes a first shield electrode made of conductive material formed under the gate conductive layer, the shield electrode being insulated from the gate conductive layer and the trench sidewalls and bottom by a layer of dielectric material.

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