Interferometric endpoint determination in a substrate etching process

• US 7,652,774 B2
• Filed: 12/10/2007
• Issued: 01/26/2010
• Est. Priority Date: 11/01/2002
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Davis, Matthew F, Lian, Lei
• Primary Examiner(s): Lyons; Michael A
• Application Number:
  US11/953,853
• Publication Number:
  US 20080151237A1
• Time in Patent Office: 778 Days
• Field of Search: 356/498, 356503-504, 438/14, 438/16
• US Class Current: 356/503
• CPC Class Codes: G01B 11/0675 using interferometry
• CPC Class Codes: G01B 11/0683 measurement during deposition or removal of the layer
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection

Abstract

In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

Claims

1. A method of processing a substrate in a process zone, the method comprising:

(a) selecting a wavelength of substrate reflected light that provides a local maximum of intensity, by reflecting light from the substrate while scanning through a sequence of successive wavelengths until a local maximum of an intensity of the substrate reflected light is detected;

(b) processing the substrate by exposing the substrate to an energized gas in the process zone while light having the selected wavelength is reflected from the substrate;

(c) detecting light reflected from the substrate which has the selected wavelength, and generating a signal; and

(d) evaluating the signal to determine an endpoint of the process.

2. A method according to claim 1 comprising scanning through wavelengths of from about 200 to about 800 nm.

3. A method according to claim 1 comprising directing a broadband spectrum of light at the substrate, detecting a reflectance spectrum of the light reflected from the substrate, and scanning through the wavelengths of the reflectance spectrum to select a wavelength having a local maximum.

4. A method according to claim 1 wherein the substrate comprises a layer, and the method comprises selecting a wavelength of light such that an internal reflection of the light from an interface between the layer and the substrate, and a surface reflection of the light from the layer, are substantially in phase.

5. A method according to claim 1 wherein the substrate comprises a patterned overlying material and an underlying material, and further comprising:

(1) in an initial stage, determining a reflectance spectrum of a substrate that is substantially absent the patterned overlying material; and

(2) in (c), normalizing the intensity of the detected light that is reflected from the substrate by an intensity of the reflectance spectrum at the wavelength of the light reflected from the substrate.

6. A method according to claim 1 wherein the substrate comprises a layer, and further comprising selecting a wavelength of light at which the layer is substantially permeable to light having the wavelength.

7. A method according to claim 1 comprising providing a substrate comprising a mask, and wherein, when a first portion of light having the wavelength is reflected from the surface of the mask and another portion of the light passes through the mask and is reflected from the interface between the mask and the substrate, the wavelength of substrate reflected light that provides a local maximum of intensity is the wavelength at which the interface and surface reflections of light are substantially in phase upon emerging from the substrate.

8. A method according to claim 1 wherein the substrate comprises polysilicon exposed between features of a nitride mask, wherein (b) comprises providing an energized gas capable of etching the polysilicon, and wherein in (a) the selected wavelength of light is from about 200 to about 800 nm.

9. A method of processing a substrate in a process zone, the method comprising:

(a) determining a wavelength of light that provides a local maximum of intensity when light having the wavelength is reflected from the substrate, by scanning through a sequence of successive wavelengths of light directed onto, or reflected from, the substrate, and detecting a local maximum of an intensity of the light reflected from the substrate;

(b) processing the substrate by exposing the substrate to an energized gas in the process zone while the substrate is exposed to light having the selected wavelength;

(c) detecting light reflected from the substrate that has the selected wavelength and generating a signal; and

(d) evaluating the signal to determine an endpoint of the process.

10. A method according to claim 9 wherein (a) comprises directing a broadband spectrum of light at the substrate and scanning through the spectrum to provide different wavelengths of light.

11. A method according to claim 9 wherein the substrate comprises a patterned overlying material and an underlying material, and further comprising:

(1) in an initial stage, determining a reflectance spectrum of a substrate that is substantially absent the patterned overlying material; and

(2) in (c), normalizing the intensity of the detected light that is reflected from the substrate by an intensity of the reflectance spectrum at the wavelength of the light reflected from the substrate.

12. A method according to claim 9 wherein the substrate comprises polysilicon exposed between features of a nitride mask, wherein (b) comprises providing an energized gas capable of etching the polysilicon, and wherein (a) comprises determining a wavelength of light which is from about 200 to about 800 nm.

13. A method of processing a substrate having a layer with a thickness, in a process zone, the method comprising:

(a) determining a wavelength of light that provides a local maximum of intensity when light having the wavelength is reflected from the substrate, by calculating a wavelength of light based on a pathlength in the thickness of the layer on the substrate that provides a local maximum of intensity when light having the wavelength is reflected from the substrate;

(b) processing the substrate by exposing the substrate to an energized gas in the process zone while the substrate is exposed to light having the selected wavelength; and

(c) detecting light reflected from the substrate that has the selected wavelength and generating a signal;

(d) evaluating the signal to determine an endpoint of the process.

14. A method according to claim 13 comprising calculating the wavelength such that the additional distance from a detection point, of a path of light that passes through a thickness of the layer and is reflected from an interface between the layer and the substrate, in comparison to a path of light that is reflected from the surface of the layer, is approximately an integral multiple of the wavelength.

15. A method according to claim 13 comprising calculating the wavelength such that an internal reflection of the light from an interface between the layer and substrate, and a surface reflection of the light from the layer, are determined to be substantially in phase.

16. A method according to claim 13 wherein the substrate comprises a layer comprising a patterned overlying material, and further comprises an underlying material below the patterned overlying material, and further comprising:

(1) in an initial stage, determining a reflectance spectrum of a substrate that is substantially absent the patterned overlying material; and

(2) in (c), normalizing the intensity of the detected light that is reflected from the substrate by an intensity of the reflectance spectrum at the wavelength of the light reflected from the substrate.

17. A method according to claim 13 wherein the substrate further comprises exposed features between a layer that is a mask, wherein (b) comprises providing an energized gas capable of etching the exposed features, and wherein in (a) the determined wavelength of the light is from about 200 to about 800 nm.

18. A substrate etching method comprising:

(a) placing a substrate in a process zone, the substrate comprising polysilicon exposed between features of a mask comprising silicon nitride;

(b) providing an energized gas in the process zone that is capable of etching the polysilicon;

(c) detecting an intensity of light that is reflected from the substrate at a wavelength of from about 200 to about 800 nm; and

(d) evaluating the detected light intensity to determine an endpoint of etching of the substrate,

whereby at an initial time during etching of the substrate, light having the wavelength generates a local maximum in intensity, when a first portion of light having the wavelength is reflected from the surface of the silicon nitride mask and another portion of the light is reflected from the interface between the silicon nitride mask and the polysilicon, and the interface and surface reflections of the light are substantially in phase upon emerging from the substrate.