Method for calculating high-resolution wafer parameter profiles
First Claim
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1. A method for calculating high-resolution wafer parameter profiles comprising the steps of:
- a) defining an appropriate product/device input dataset for a plurality of different die sizes and products, wherein the dataset comprises physical correlation reference points comprising information relating to the size of each die in two directions as well as the location of at least one of the corners of each die;
b) collecting a die level yield bin dataset for one of the products/devices defined in step (a) by using the product/device input dataset to generate a table of data for the lots and wafers of said one of the products/devices with a virtual die coordinate for each die and a corresponding value;
c) calculating a single composite value for each said virtual die coordinate;
d) defining where on a virtual die it is desired to assign a composite value;
e) calculating physical coordinates for each die value using the corresponding virtual coordinate and a physical translation key;
f) repeating steps (b), (c), (d) and (e) for each of said die sizes and products defined in step (a);
g) merging the data from a plurality of files into one file;
h) defining a grid;
i) creating a table with all possible grid coordinates that would fit on a production wafer;
j) defining a smoothing algorithm;
k) calculating the smoothed value for each point on the grid from the combined data; and
l) plotting a wafer profile.
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Abstract
An embodiment of the present invention provides a method to utilize data from many different die sizes and products so that highly detailed wafer profiles can be generated that have an improved signal to noise ratio and spatial resolution. Instead of being limited to single die size like normal wafer maps, this method takes advantage of multiple die sizes and their variation in placement on the wafer to increase the information available about the wafer patterns.
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Citations
21 Claims
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1. A method for calculating high-resolution wafer parameter profiles comprising the steps of:
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a) defining an appropriate product/device input dataset for a plurality of different die sizes and products, wherein the dataset comprises physical correlation reference points comprising information relating to the size of each die in two directions as well as the location of at least one of the corners of each die; b) collecting a die level yield bin dataset for one of the products/devices defined in step (a) by using the product/device input dataset to generate a table of data for the lots and wafers of said one of the products/devices with a virtual die coordinate for each die and a corresponding value; c) calculating a single composite value for each said virtual die coordinate; d) defining where on a virtual die it is desired to assign a composite value; e) calculating physical coordinates for each die value using the corresponding virtual coordinate and a physical translation key; f) repeating steps (b), (c), (d) and (e) for each of said die sizes and products defined in step (a); g) merging the data from a plurality of files into one file; h) defining a grid; i) creating a table with all possible grid coordinates that would fit on a production wafer; j) defining a smoothing algorithm; k) calculating the smoothed value for each point on the grid from the combined data; and l) plotting a wafer profile. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification