Method of fabricating thin film transistor

• US 7,655,127 B2
• Filed: 11/27/2006
• Issued: 02/02/2010
• Est. Priority Date: 11/27/2006
• Status: Active Grant

• Current Assignee: 3M Innovative Properties Company (3M Company)
• Original Assignee: 3M Innovative Properties Company (3M Company)
• Inventors: Ho, Grace L., Theiss, Steven D., Bench, Michael W.
• Primary Examiner(s): Wong; Edna
• Application Number:
  US11/563,454
• Publication Number:
  US 20080121528A1
• Time in Patent Office: 1,163 Days
• Field of Search: 205/223, 205/221
• US Class Current: 205/221
• CPC Class Codes: C25D 11/02 Anodisation
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.

Claims

1. A method of fabricating an electronic device, comprising the steps of:

(a) forming an anodized layer having a thickness greater than a desired thickness;

(b) forming an electrically conductive layer on the anodized layer;

(c) removing the conductive layer in a selected area to expose the anodized layer; and

(d) removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.

2. The method of claim 1, wherein steps (a) through (d) are carried out sequentially.

3. The method of claim 1, wherein the step of removing the conductive layer comprises etching the conductive layer.

4. The method of claim 1, wherein the step of removing the exposed anodized layer comprises etching the exposed anodized layer.

5. The method of claim 1, wherein the steps of removing the conductive layer and the exposed anodized layer comprise etching the conductive layer and the exposed anodized layer.

6. The method of claim 5, wherein the etching of the conductive layer and the exposed anodized layer is accomplished using a same etchant.