III-V nitride substrate boule and method of making and using the same
First Claim
Patent Images
1. A single crystal article comprising:
- an (Al,Ga,In)N seed crystal having a first growth surface, anda microelectronic device quality (Al,Ga,In)N boule grown on said seed crystal, the boule having a thickness of at least 4 millimeters in a direction perpendicular to the first growth surface;
wherein the boule has a diameter greater than 1 centimeter, is substantially crack-free, and has a top surface defect density of less than 107 defects cm−
2.
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Abstract
A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm−2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.
42 Citations
66 Claims
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1. A single crystal article comprising:
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an (Al,Ga,In)N seed crystal having a first growth surface, and a microelectronic device quality (Al,Ga,In)N boule grown on said seed crystal, the boule having a thickness of at least 4 millimeters in a direction perpendicular to the first growth surface; wherein the boule has a diameter greater than 1 centimeter, is substantially crack-free, and has a top surface defect density of less than 107 defects cm−
2. - View Dependent Claims (2)
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3. A single crystal article comprising:
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an (Al,Ga,In)N seed crystal having a first growth surface, and a microelectronic device quality (Al,Ga,In)N boule grown on said seed crystal, the boule having a thickness of at least 4 millimeters in a direction perpendicular to the first growth surface; wherein the seed crystal has an orientation selected from the group consisting of c-axis, a-axis, m-axis, r-axis, and offcut less than 10 degrees from a primary crystal axis. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A single crystal article comprising:
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an (Al,Ga,In)N seed crystal having a first growth surface, and a microelectronic device quality (Al,Ga,In)N boule grown on said seed crystal, the boule having a thickness of at least 4 millimeters in a direction perpendicular to the first growth surface; wherein the boule has a surface defect density of less than 106 defects cm−
2. - View Dependent Claims (37, 38, 39)
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- 40. A (Al,Ga,In)N boule comprising crystalline seed material and boule material grown thereon, with an interlayer between said seed material and said boule material, the boule having a thickness of at least 4 millimeters in a direction perpendicular to a growth surface, wherein the boule is grown on a seed crystal having an orientation selected from the group consisting of c-axis, a-axis, m-axis, r-axis, offcut orientation offcut from 1 to 10 degrees from the primary crystal axis, N-face and (In,Al,Ga)-face.
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42. An (Al,Ga,In)N wafer derived from a single crystal article, the single crystal article including an (Al,Ga,In)N seed crystal having a first growth surface, and including a microelectronic device quality (Al,Ga,In)N boule grown on said seed crystal, the boule having a thickness of at least 4 millimeters in a direction perpendicular to the first growth surface, wherein the wafer is characterized by at least one of the following features (a) to (f):
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(a) the wafer has an orientation offcut from 0.5 to 10 degrees from a primary crystal axis; (b) the wafer has a surface with an RMS roughness less than 5 Angstroms over a 10×
10 micrometers2 area;(c) the wafer has a radius of curvature greater than 1 meter; (d) the wafer has a flat oriented to better than +0.3 degrees; (e) the wafer has a TTV of less than 20% of the average wafer thickness; and (f) the wafer has a warp of less than 50 micrometers. - View Dependent Claims (43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56)
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57. An (Al,Ga,In)N wafer having a surface with an RMS roughness less than 5 Angstroms over a 10×
- 10 micrometers2 area.
- View Dependent Claims (58, 59, 60, 61, 62, 63, 64, 65, 66)
Specification