Electro-magnetic storage device and method
First Claim
1. A memory device, comprising:
- a first magnetic material to attract a movable structure when a first voltage is applied between the first magnetic material and the movable structure;
wherein when the first voltage is applied between the movable arm and the first magnetic layer, the movable arm moves upward toward the first magnetic layer and attaches to the dielectric layer because of electrostatic force, remains attached even after the removal of the voltage due to magnetic force; and
a second magnetic material to release the movable structure when a second voltage is applied between the second magnetic material and the movable structure;
wherein the second voltage may create a force stronger than the magnetic force holding the movable arm to the first dielectric layer, and thereby cause the movable arm to detach from the first dielectric layer and to attach to the metal layer, wherein the first magnetic material and the second magnetic material are between approximately 50 to 100 Å
(Angstroms) in thickness, and wherein the memory device is faster than 5 nanoseconds in speed.
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Abstract
An electro-magnetic storage device and method are disclosed. In one embodiment, a memory device includes a first magnetic material to attract a movable structure (e.g., a ferromagnetic material) when a first voltage is applied between the first magnetic material and the movable structure, and a second magnetic material to release the movable structure when a second voltage is applied between the second magnetic material and the movable structure. The movable arm may create a closed circuit when the second voltage is applied between the second magnetic material and the movable structure. There may be a vacuum-gap between the movable structure and at least one of the first magnetic material and/or the second magnetic material. The memory device may be stackable on other memory devices having similar properties, and/or electrically coupled with other memory devices having similar properties in a memory array.
10 Citations
16 Claims
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1. A memory device, comprising:
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a first magnetic material to attract a movable structure when a first voltage is applied between the first magnetic material and the movable structure;
wherein when the first voltage is applied between the movable arm and the first magnetic layer, the movable arm moves upward toward the first magnetic layer and attaches to the dielectric layer because of electrostatic force, remains attached even after the removal of the voltage due to magnetic force; anda second magnetic material to release the movable structure when a second voltage is applied between the second magnetic material and the movable structure;
wherein the second voltage may create a force stronger than the magnetic force holding the movable arm to the first dielectric layer, and thereby cause the movable arm to detach from the first dielectric layer and to attach to the metal layer, wherein the first magnetic material and the second magnetic material are between approximately 50 to 100 Å
(Angstroms) in thickness, and wherein the memory device is faster than 5 nanoseconds in speed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A system comprising:
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means for processing a command associated with a memory device having at least one movable structure; and means for toggling a binary state of the memory device responsive to the movable structure of the memory device, wherein the memory device comprises a first magnetic material and a second magnetic material of thickness approximately between 50 to 100 Å
(Angstroms), and wherein the memory device is faster than 5 nanoseconds in speed. - View Dependent Claims (14)
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15. A structure assembly, comprising:
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a first magnetic layer formed above a substrate; a first dielectric layer formed above the first magnetic layer; a set of one or more metal layers having at least one movable component that is encompassed by a vacuum gap and which is formed above the first dielectric layer; a second dielectric layer formed above the vacuum gap and above the set of one or more metal layers; and a second magnetic layer formed above the second dielectric layer, wherein the first magnetic material and the second magnetic material are between approximately 50 to 100 Å
(Angstroms) in thickness, and wherein the memory device is faster than 5 nanoseconds in speed. - View Dependent Claims (16)
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Specification