Mask and method to pattern chromeless phase lithography contact hole

• US 7,655,388 B2
• Filed: 01/03/2005
• Issued: 02/02/2010
• Est. Priority Date: 01/03/2005
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Chartered Semiconductor Manufacturing Incorporated (Mamoura Diversified Global Holding PJSC)
• Inventors: Chong, Hury Ming, Lin, Qun Ying, Tan, Soon Yoeng, Tan, Sia Kim, Hsia, Liang Choo
• Primary Examiner(s): Huff; Mark F
• Assistant Examiner(s): Fraser; Stewart A
• Application Number:
  US11/028,421
• Publication Number:
  US 20060147813A1
• Time in Patent Office: 1,856 Days
• Field of Search: 430/5, 430311-313, 430/322
• US Class Current: 430/322
• CPC Class Codes: G03F 1/34 Phase-edge PSM, e.g. chromeless PSM; Preparation thereof

Abstract

A chromeless phase shift mask and Method for making and using. The A chromeless phase shift mask is used to pattern contact holes. The chromeless phase shift mask preferably comprises: a first phase shift region and a second phase shift region; the first region is comprised of a unit cell which is comprised of a rectangular center section and at least three rectangular sections (legs) outwards extending from the rectangular center section. The second region is adjacent to said first region. The interference between the first and second phase shift regions creates a contact hole pattern.

Claims

1. A method for projecting patterns onto a semiconductor substrate comprising:

providing an illumination source;

providing a phase shift mask that has a first phase shift region and a second phase shift region, the first shift region is disposed on a first layer of the mask and the second phase shift region on a second layer of the mask, wherein the first and second phase shift regions are out of phase, the first phase shift region comprises a continuous unit cell, wherein the unit cell comprises a center section and extension sections, the extension sections are contiguous to and extend outwards from the center section, the distinct extension sections having a same width as the center section, the second phase shift region is adjacent to the unit cell in the first phase shift region; and

projecting light from the illumination source through the phase shift mask onto the semiconductor substrate, wherein destructive interference between the first and second phase shift regions due to shape of the unit cell creates a desired exposure pattern on a photosensitive layer on the substrate corresponding to about the center section.

2. The method of claim 1 wherein the dimension width of the rectangular sections are less than half the illuminating wavelength and low inner and outer sigma factors are used.

34. The method of claim 1 wherein length and width of the distinct extension sections determine a size of the desired exposure pattern.

3. A method for projecting patterns onto a semiconductor substrate comprising:

providing an illumination source;

providing a phase shift mask that has a first phase shift region and a second phase shift region, wherein the first phase shift region is disposed on a first layer of the mask and the second phase shift region is disposed on a second layer, the first and second phase shift regions are out of phase, the first phase shift region including a continuous unit cell comprising a center section and distinct extension sections, the extension sections are contiguous to and extend outwards from the center section, the distinct extension sections having a same width as the center section, the center section having a rectangular shape, wherein the unit cell has a shape that when light passes through the mask, destructive interference between the first phase shift region and the second phase shift region creates a desired exposure pattern corresponding to about the center section;

providing a lens system that receives the desired exposure pattern that is projected from the phase shift mask;

reducing the desired exposure pattern in the lens system; and

projecting the reduced desired exposure pattern onto a photosensitive layer on the semiconductor substrate.

4. The method of claim 3 wherein the illumination source is an off-axis type illumination source.

5. The method of claim 3 wherein the illumination source is a quasar type illumination source.

6. The method of claim 3 wherein the photosensitive layer comprises photoresist.

7. The method of claim 3 wherein the photosensitive layer comprises a photoresist layer and the reduced desired exposure pattern comprises a contact hole pattern.

8. The method of claim 3 wherein said photosensitive layer comprises a photoresist layer and the reduced desired exposure pattern comprises a row or a column of contact hole patterns.

9. The method of claim 3 wherein:

the first phase shift region has a 180 degree shift and the second phase shift region has a zero degree shift;

or

the first phase shift region has a 0 degree shift and the second phase shift region has a 180 degree shift.

10. The method of claim 3 wherein the unit cell has an orthogonal cross shape with the distinct extension sections extending outwards from the center section.

11. The method of claim 3 wherein the unit cell has a T shape with three distinct extension sections extending outwards from the center section.

12. The method of claim 3 wherein the unit cell has an orthogonal cross shape with the center section having a square shape and four distinct square shaped rectangular sections extending outwards from the square center section, the center section and the rectangular sections have the same length sides.

13. The method of claim 3 wherein the extension sections have a minimum length between 70 and 200% of the width of the center section.

14. The method of claim 3 wherein the first region comprises a plurality of unit cells arranged in a row or column formation whereby contact holes are formed in row or column under the center sections.

35. The method of claim 3 wherein length and width of the distinct extension sections determine a size of the desired exposure pattern.

15. A method of forming a semiconductor device comprising:

providing a substrate; and

patterning the substrate comprising

providing a mask with first and second phase shift regions which are out of phase, the first phase shift region comprising a continuous unit cell, wherein the unit cell is disposed in the first phase shift region and comprises a central portion and distinct extension portions which are contiguous to and extend from the central portion, the distinct extension sections having a same width as the central portion, and

exposing the substrate with an illumination source using the mask, wherein destructive interference between the first and second phase shift regions due to shape of the unit cell produces a desired exposure pattern on the substrate.

16. The method of claim 15 wherein the central and distinct extension portions comprise rectangular shaped portions.

17. The method of claim 16 wherein the unit cell comprises at least three distinct extension portions extending from at least three sides of the central portion.

18. The method of claim 16 wherein the unit cell comprises four distinct extension portions extending from sides of the central portion.

19. The method of claim 15 wherein the unit cell comprises at least three distinct extension portions extending from the central portion.

20. The method of claim 15 wherein the unit comprises four distinct extension portions extending from the central portion.

21. The method of claim 15 wherein the unit cell comprises three distinct extension portions extending from at least three sides of the central portion to form a T-shaped unit cell.

22. The method of claim 15 wherein the unit cell comprises four distinct extension portions extending from the central portion to form a cross-shaped unit cell.

23. The method of claim 15 wherein the desired exposure pattern corresponds to a location at about the central portion.

24. The method of claim 23 wherein the desired exposure pattern comprises a contact opening.

25. The method of claim 15 wherein the mask comprises a plurality of unit cells configured to form a plurality of desired exposure patterns.

26. The method of claim 25 wherein the desired exposure patterns comprise a plurality of contact openings.

27. The method of claim 25 wherein the desired exposure patterns correspond to a location at about the central portions of the unit cells.

28. The method of claim 25 wherein the desired exposure patterns comprise a plurality of contact openings arranged in an array.

29. The method of claim 28 wherein the desired exposure patterns correspond to a location at about the central portions of the unit cells.

30. The method of claim 15 wherein the substrate is prepared with a photosensitive layer.

31. The method of claim 30 wherein the desired exposure pattern comprises a contact opening.

32. The method of claim 30 wherein the mask comprises a plurality of unit cells configured to form a plurality of desired exposure patterns.

33. The method of claim 32 wherein the desired exposure patterns comprise a plurality of contact openings.

36. The method of claim 15 wherein length and width of the distinct extension sections determine a size of the desired exposure pattern.