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Method for manufacturing semiconductor device

  • US 7,655,526 B2
  • Filed: 12/12/2006
  • Issued: 02/02/2010
  • Est. Priority Date: 12/28/2005
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising the steps of:

  • forming a gate electrode on a semiconductor substrate by patterning a layer containing polysilicon;

    forming a drift area in the semiconductor substrate by implanting one or more first dopants using the gate electrode as a mask;

    forming a sidewall oxide layer at sides of the gate electrode by oxidizing the gate electrode after forming the drift area;

    forming a sidewall spacer at sides of the gate electrode; and

    forming a source/drain area in the semiconductor substrate by implanting one or more second dopants using the gate electrode and the sidewall spacer as a mask.

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