MEMS device and interposer and method for integrating MEMS device and interposer
First Claim
1. A method for manufacturing a Microelectromechanical Systems (MEMS) assembly, said method comprising:
- obtaining an SOI wafer, which comprises;
(i) a handle layer,(ii) a dielectric layer on said handle layer, and(iii) a device layer on said dielectric layer;
etching said device layer of said SOI wafer to at least partially define said MEMS device;
obtaining an interposer wafer;
bonding said SOI wafer to said interposer wafer in a way such that said device layer of said SOI wafer faces said interposer wafer and a portion of the dielectric layer is adjacent said at least partially defined MEMS device;
removing said handle layer of said SOI wafer; and
removing completely at least the portion of said dielectric layer of the SOI wafer adjacent said at least partially defined MEMS device.
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Abstract
A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially define the MEMS device, bonding the SOI wafer to an interposer by direct boding, removing the handle layer of the SOI wafer, removing the oxide layer of the SOI wafer, and further etching the device layer of the SOI wafer to define the MEMS device. A structure manufactured according to the above described processes includes an interposer comprising an SOI wafer and a MEMS device mounted on the interposer. The MEMS device comprises posts extending from a silicon plate. The MEMS device is directly mounted to the interposer by bonding the posts of the MEMS device to the device layer of the interposer.
23 Citations
18 Claims
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1. A method for manufacturing a Microelectromechanical Systems (MEMS) assembly, said method comprising:
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obtaining an SOI wafer, which comprises; (i) a handle layer, (ii) a dielectric layer on said handle layer, and (iii) a device layer on said dielectric layer;
etching said device layer of said SOI wafer to at least partially define said MEMS device;obtaining an interposer wafer; bonding said SOI wafer to said interposer wafer in a way such that said device layer of said SOI wafer faces said interposer wafer and a portion of the dielectric layer is adjacent said at least partially defined MEMS device; removing said handle layer of said SOI wafer; and removing completely at least the portion of said dielectric layer of the SOI wafer adjacent said at least partially defined MEMS device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 13, 16)
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11. A method for manufacturing a Microelectromechanical Systems (MEMS) assembly, said method comprising:
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obtaining an SOI wafer, which comprises; (i) a handle layer, (ii) a dielectric layer on said handle layer, and (iii) a device layer on said dielectric layer; etching said device layer of said SOI wafer to partially define said MEMS device; obtaining an interposer wafer; bonding said SOI wafer to said interposer wafer in a way such that said device layer of said SOL wafer faces said interposer wafer and a portion of the dielectric layer is adjacent said at least partially defined MEMS device; removing said handle layer of said SOI wafer; removing completely at least the portion of said dielectric layer of the SOI wafer adjacent said at least partially defined MEMS device; and etching said device layer of said SOI wafer to further define said MEMS device. - View Dependent Claims (14, 17)
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12. A method for manufacturing Microelectromechanical Systems (MEMS) devices, said method comprising:
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obtaining an SOI wafer, which comprises; (i) a handle layer, (ii) a dielectric layer on said handle layer, and (iii) a device layer on said dielectric layer; etching said device layer of said SOI wafer to define an array of sets of structural posts, wherein each set of structural post includes at least one structure post; obtaining an interposer wafer; bonding said SOI wafer to said interposer wafer in a way such that said device layer of said SOI wafer faces said interposer wafer and a portion of the dielectric layer is adjacent said at least partially defined MEMS device; removing said handle layer of said SOI wafer; removing completely at least the portion of said dielectric layer of the SOI wafer adjacent said at least partially defined MEMS device; etching said device layer of said SOI wafer to define an array of said MEMS devices; and
separating the result structure into individual MEMS devices. - View Dependent Claims (15, 18)
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Specification