Method for manufacturing semiconductor device

• US 7,655,566 B2
• Filed: 07/18/2006
• Issued: 02/02/2010
• Est. Priority Date: 07/27/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fujii, Gen
• Primary Examiner(s): Smith; Matthew
• Assistant Examiner(s): Jefferson; Quovaunda
• Application Number:
  US11/488,143
• Publication Number:
  US 20070026580A1
• Time in Patent Office: 1,295 Days
• Field of Search: 438/151, 438/199, 438/584, 438/644, 438/648, 438/652, 438/653, 438/674, 438/676, 438/678, 438/685, 438/FOR.390, 438FOR 405-407, 257/E21.535, 257/E21.538, 257/E21.525, 257/E21.295, 257/E21.44, 257/E21.584, 257/E21.586
• US Class Current: 438/678
• CPC Class Codes: H01L 21/0271 comprising organic layers
• CPC Class Codes: H01L 21/0272 for lift-off processes
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76874 for electroless plating
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

A semiconductor device is manufactured by forming a gate electrode layer over a substrate having a light transmitting property; forming a gate insulating layer over the gate electrode layer; forming a photocatalyst material over the gate insulating layer; immersing the photocatalyst material in a solution containing a plating catalyst material and selectively exposing the photocatalyst material to light transmitted through the substrate in the solution containing the plating catalyst material with the use of the gate electrode layer as a mask to adsorb or deposit the plating catalyst material onto the light-exposed photocatalyst material; immersing the plating catalyst material in a plating solution containing a metal material to form a source electrode layer and a drain electrode layer on the surface of the photocatalyst material adsorbing or depositing the plating catalyst material; and forming a semiconductor layer over the source electrode layer and the drain electrode layer.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive layer over a substrate having a light transmitting property;

forming an insulating layer over the first conductive layer;

forming a photocatalyst material over the insulating layer;

immersing the photocatalyst material in a solution containing a plating catalyst material and exposing a first part and a second part of the photocatalyst material to light transmitted through the substrate in the solution containing the plating catalyst material with the use of the first conductive layer as a mask to deposit the plating catalyst material onto the part of the photocatalyst material;

immersing the plating catalyst material in a plating solution containing a metal material to form a second conductive layer and a third conductive layer over the first part and the second part of the photocatalyst material, respectively; and

forming a semiconductor layer over the second conductive layer and the third conductive layer.

2. A method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor layer is formed over the second conductive layer and the third conductive layer by etching the photocatalyst material with the use of the second conductive layer and the third conductive layer as masks.

3. A method for manufacturing a semiconductor device according to claim 1, wherein the photocatalyst material is selectively formed by discharging a composition containing the photocatalyst material.

4. A method for manufacturing a semiconductor device according to claim 1, wherein titanium oxide is used as the photocatalyst material.

5. A method for manufacturing a semiconductor device according to claim 1, wherein one of a nickel alloy thin film and a copper thin film is formed as the second conductive layer and the third conductive layer.

6. A method for manufacturing a semiconductor device according to claim 1, wherein at least one of palladium, platinum, rhodium, and gold is used as the plating catalyst material.

7. A method for manufacturing a semiconductor device according to claim 1, wherein the solution containing the plating catalyst material is used with its pH adjusted to 3 to 6.

8. A method for manufacturing a semiconductor device according to claim 1, wherein the first conductive layer is a gate electrode layer, the second conductive layer is a source electrode layer, the third conductive layer is a drain electrode layer, and the insulating layer is a gate insulating layer.

9. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive layer over a substrate having a light transmitting property;

forming an insulating layer over the first conductive layer;

forming a photocatalyst material over the insulating layer;

forming a mask film over the photocatalyst material;

exposing a first part and a second part of the photocatalyst material to light transmitted through the substrate with the use of the first conductive layer as a mask, thereby removing the mask film over the first part and the second part of the photocatalyst material;

immersing the first part and the second part of the photocatalyst material in a solution containing a plating catalyst material to deposit the plating catalyst material onto the first part and the second part of the photocatalyst material;

immersing the plating catalyst material in a plating solution containing a metal material to form a second conductive layer and a third conductive layer over the first part and the second part of the photocatalyst material, respectively; and

forming a semiconductor layer over the second conductive layer and the third conductive layer.

10. A method for manufacturing a semiconductor device according to claim 9, wherein the semiconductor layer is formed over the second conductive layer and the third conductive layer by etching the photocatalyst material and the mask film with the use of the second conductive layer and the third conductive layer as masks.

11. A method for manufacturing a semiconductor device according to claim 9, wherein the mask film is formed of a silane coupling agent having a fluorocarbon group or an alkyl group as its end group.

12. A method for manufacturing a semiconductor device according to claim 9, wherein the photocatalyst material is selectively formed by discharging a composition containing the photocatalyst material.

13. A method for manufacturing a semiconductor device according to claim 9, wherein titanium oxide is used as the photocatalyst material.

14. A method for manufacturing a semiconductor device according to claim 9, wherein one of a nickel alloy thin film and a copper thin film is formed as the second conductive layer and the third conductive layer.

15. A method for manufacturing a semiconductor device according to claim 9, wherein at least one of palladium, platinum, rhodium, and gold is used as the plating catalyst material.

16. A method for manufacturing a semiconductor device according to claim 9, wherein the solution containing the plating catalyst material is used with its pH adjusted to 3 to 6.

17. A method for manufacturing a semiconductor device according to claim 9, wherein the first conductive layer is a gate electrode layer, the second conductive layer is a source electrode layer, the third conductive layer is a drain electrode layer, and the insulating layer is a gate insulating layer.

18. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive layer over a substrate having a light transmitting property;

forming an insulating layer over the first conductive layer;

forming a photocatalyst material over the insulating layer;

immersing the photocatalyst material in a solution containing a plating catalyst material and exposing a first part and a second part of the photocatalyst material to light transmitted through the substrate in the solution containing the plating catalyst material with the use of the first conductive layer as a mask to deposit the plating catalyst material onto the first part and the second part of the photocatalyst material;

immersing the plating catalyst material in a plating solution containing a first metal material to form a second conductive layer and a third conductive layer over the first part and the second part of the photocatalyst material, respectively;

immersing the second conductive layer and the third conductive layer in a plating solution containing a second metal material to form a first metal film over the second conductive layer and a second metal film over the third conductive layer; and

forming a semiconductor layer over the first metal film and the second metal film.

19. A method for manufacturing a semiconductor device according to claim 18, wherein the semiconductor layer is formed over the second conductive layer and the third conductive layer by etching the photocatalyst material with the use of the second conductive layer and the third conductive layer as masks.

20. A method for manufacturing a semiconductor device according to claim 18, wherein gold is used as the second metal material.

21. A method for manufacturing a semiconductor device according to claim 18, wherein the photocatalyst material is selectively formed by discharging a composition containing the photocatalyst material.

22. A method for manufacturing a semiconductor device according to claim 18, wherein titanium oxide is used as the photocatalyst material.

23. A method for manufacturing a semiconductor device according to claim 18, wherein one of a nickel alloy thin film and a copper thin film is formed as the second conductive layer and the third conductive layer.

24. A method for manufacturing a semiconductor device according to claim 18, wherein at least one of palladium, platinum, rhodium, and gold is used as the plating catalyst material.

25. A method for manufacturing a semiconductor device according to claim 18, wherein the solution containing the plating catalyst material is used with its pH adjusted to 3 to 6.

26. A method for manufacturing a semiconductor device according to claim 18, wherein the first conductive layer is a gate electrode layer, the second conductive layer is a source electrode layer, the third conductive layer is a drain electrode layer, and the insulating layer is a gate insulating layer.

27. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive layer over a substrate having a light transmitting property;

forming an insulating layer over the first conductive layer;

forming a photocatalyst material over the insulating layer;

forming a mask film over the photocatalyst material;

exposing the a first part and a second part of the photocatalyst material to light transmitted through the substrate with the use of the first conductive layer as a mask, thereby removing the mask film over the first part and the second part of the photocatalyst material;

immersing the first part and the second part of the photocatalyst material in a solution containing a plating catalyst material to deposit the plating catalyst material onto the first part and the second part of the photocatalyst material;

immersing the plating catalyst material in a plating solution containing a first metal material to form a second conductive layer and a third conductive layer over the first part and the second part of the photocatalyst material, respectively;

immersing the second conductive layer and the third conductive layer in a plating solution containing a second metal material to form a first metal film and a second metal film over the second conductive layer and the third conductive layer, respectively; and

forming a semiconductor layer over the first metal film and the second metal film.

28. A method for manufacturing a semiconductor device according to claim 27, wherein the semiconductor layer is formed over the second conductive layer and the third conductive layer by etching the photocatalyst material and the mask film with the use of the second conductive layer and the third conductive layer as masks.

29. A method for manufacturing a semiconductor device according to claim 27, wherein gold is used as the second metal material.

30. A method for manufacturing a semiconductor device according to claim 27, wherein the mask film is formed of a silane coupling agent having a fluorocarbon group or an alkyl group as its end group.

31. A method for manufacturing a semiconductor device according to claim 27, wherein the photocatalyst material is selectively formed by discharging a composition containing the photocatalyst material.

32. A method for manufacturing a semiconductor device according to claim 27, wherein titanium oxide is used as the photocatalyst material.

33. A method for manufacturing a semiconductor device according to claim 27, wherein one of a nickel alloy thin film and a copper thin film is formed as the second conductive layer and the third conductive layer.

34. A method for manufacturing a semiconductor device according to claim 27, wherein at least one of palladium, platinum, rhodium, and gold is used as the plating catalyst material.

35. A method for manufacturing a semiconductor device according to claim 27, wherein the solution containing the plating catalyst material is used with its pH adjusted to 3 to 6.

36. A method for manufacturing a semiconductor device according to claim 27, wherein the first conductive layer is a gate electrode layer, the second conductive layer is a source electrode layer, the third conductive layer is a drain electrode layer, and the insulating layer is a gate insulating layer.