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Superjunction semiconductor device

  • US 7,655,981 B2
  • Filed: 10/16/2007
  • Issued: 02/02/2010
  • Est. Priority Date: 11/28/2003
  • Status: Active Grant
First Claim
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1. A superjunction semiconductor device having an active region and a termination region surrounding the active region, a central vertical axis of a boundary column of a second conductivity type material defining the boundary between the active region and the termination region, the active and termination regions including columns of first and second conductivity type material alternately arranged along a horizontal direction in a semiconductor region having top and bottom surfaces,wherein the spacing between the central vertical axes of the boundary column and a first column of the second conductivity type material in the termination region placed closest to the boundary column is equal to the spacing between the central vertical axes of the boundary column and a second column of the second conductivity type material in the active region placed closest to the boundary column, and the width of the first column is greater than the width of the second column.

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