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Photodetector for backside-illuminated sensor

  • US 7,656,000 B2
  • Filed: 05/24/2007
  • Issued: 02/02/2010
  • Est. Priority Date: 05/24/2007
  • Status: Active Grant
First Claim
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1. A backside-illuminated sensor comprising:

  • a semiconductor substrate having a front surface and a back surface, wherein the semiconductor substrate is configured such that radiation incident the back surface is sensed by a plurality of pixels formed on the front surface; and

    the plurality of pixels formed on the front surface of the semiconductor substrate, wherein at least one pixel comprises a photogate structure, the photogate structure having a gate including a reflective layer.

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