Power semiconductor device

• US 7,656,016 B2
• Filed: 12/07/2005
• Issued: 02/02/2010
• Est. Priority Date: 12/08/2004
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Yoshimatsu, Naoki, Yoshida, Takanobu, Shinohara, Toshiaki
• Primary Examiner(s): Chu; Chris C
• Application Number:
  US11/295,442
• Publication Number:
  US 20060119512A1
• Time in Patent Office: 1,518 Days
• Field of Search: 257/E25.025, 257/714, 257/E23.092, 257/686, 257/685, 257/712, 257/706, 257/707, 257/E25.023, 257/E25.027, 257/E21.38, 257/E21.418, 257/E21.257, 257/E29.257, 342/372, 361/699, 361/698, 361/689, 357/72, 357/75, 357/74, 357/82, 357/65, 165/80.4, 165/80.5
• US Class Current: 257/686
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 25/112 Mixed assemblies
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01Q 3/26 varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture H01Q3/12, H01Q3/22, H01Q3/24 take precedence
• CPC Class Codes: H05K 7/20927 Liquid coolant without phase change

Abstract

One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.

Claims

1. A power semiconductor device, comprising:

at least one pair of power modules including a first power module and a second power module, each of said power modules formed in a separate resin package, each having a substantially flat molding surface covered with molding resin and a radiating surface opposite to the molding surface; and

a pair of radiating fins sandwiching said power modules such that the molding surfaces of the resin package of said power modules directly contact each other and the radiating surfaces of the resin package each contact said radiating fins,

wherein each of said power modules includes a pair of main terminals and at least one control terminal, and each of said power modules further having first and second side surfaces opposite to each other,

wherein the main terminals of said power modules extend from the first side surfaces and have emitter and collector terminals, the emitter terminal of the first power module opposes to the collector terminal of the second power module, and the collector terminal of the first power module opposes to the emitter terminal of the second power module, and

the control terminal of said power module extends from the second side surface.

2. The power semiconductor device according to claim 1, further comprising:

a smoothing capacitor having a pair of capacitor terminals; and

a wiring board for mounting said power modules and said smoothing capacitor, said wiring board including a positive pattern for electrical connection between the emitter terminal of the first power module and one of the capacitor terminals, and a negative pattern for electrical connection between the collector terminal of the second power module and the other one of the capacitor terminals,

wherein the positive and negative patterns are formed on lower and upper surfaces of said wiring board so as to oppose to each other.

3. The power semiconductor device according to claim 1, further comprising a control board electrically connected with the control terminal.

4. The power semiconductor device according to claim 1,

wherein each of the main terminals of said power modules has a bent portion for mounting on a wiring board.

5. The power semiconductor device according to claim 1, further comprising a smoothing capacitor intervened between the molding surfaces of said power modules.

6. The power semiconductor device according to claim 1, further comprising a spring intervened between the molding surfaces of said power modules.

7. The power semiconductor device according to claim 6,

wherein the boss and the recess are arranged symmetrically relative to a center line running through a center point of the molding surface.

8. The power semiconductor device according to claim 1,

wherein each of said first and second power modules including a boss and a recess on the molding surface;

and

wherein the boss and the recess of said first power module fit the recess and the boss of said second power module, respectively.

9. A power semiconductor device, comprising:

at least one pair of power modules, each of said power modules formed in a separate resin package, each having a substantially flat molding surface covered with molding resin and a radiating surface opposite to the molding surface; and

a pair of radiating fins sandwiching said power modules such that the molding surfaces of the resin package of said power modules directly contact each other and the radiating surfaces of the resin package each contact said radiating fins,

wherein the pair of said radiating fins includes first and second radiating fins, each of which includes a pair of coolant channels;

wherein ones of the coolant channels of said radiating fins are in fluid communication with each other via a first pipe, and the others of the coolant channels of said radiating fins are in fluid communication with each other via a second pipe; and

wherein said first radiating fin includes an inlet and an outlet, and said second radiating fin includes a third pipe for fluid communication between one of the coolant channel and the other of the coolant thereof;

whereby coolant circulates from the input to the output via the coolant channels of said radiating fins and first through third pipes.

10. A power semiconductor device, comprising:

a first power module including a first resin package having a first fiat molding surface covered with molding resin, a first radiating surface opposite to the first molding surface, a first emitter and first collector terminal extending from said first resin package;

a second power module including a second resin package having a second flat molding surface covered with molding resin, a second radiating surface opposite to the second molding surface, a second emitter and second collector terminal extending from said second resin package, wherein electrical connection between the first collector terminal of said first power module and the second emitter terminal of said second power module is made outside said first and second resin packages; and

a pair of radiators sandwiching said first and second power modules such that the first and second molding surfaces of said first and second power modules contact each other and the first and second radiating surfaces thereof each contact said radiators.

11. The power semiconductor device according to claim 10,

wherein each of said first and second power modules includes at least one control terminal extending from said first and second resin packages, respectively.

12. The power semiconductor device according to claim 10,

wherein the first emitter terminal of said first power module opposes to the second collector terminal of said second power module, and the first collector terminal of said first power module opposes to the second emitter terminal of said second power module.

13. The power semiconductor device according to claim 10, further comprising:

a smoothing capacitor having a pair of capacitor terminals; and

a wiring board for mounting said first and second power modules and said smoothing capacitor, said wiring board including a positive pattern for electrical connection between the first emitter terminal of said first power module and one of the capacitor terminals, and a negative pattern for electrical connection between the second collector terminal of said second power module and the other one of the capacitor terminals,

wherein the positive and negative patterns are formed on lower and upper surfaces of said wiring board so as to oppose to each other.

14. The power semiconductor device according to claim 10, further comprising a control board electrically connected with the control terminal.

15. The power semiconductor device according to claim 10,

wherein each of the terminals of said first and second power modules has a bent portion for mounting on a wiring board.

16. The power semiconductor device according to claim 10,

wherein the pair of said radiators includes first and second radiators, each of which includes a pair of coolant channels;

wherein ones of the coolant channels of said radiators are in fluid communication with each other via a first pipe, and the others of the coolant channels of said radiators are in fluid communication with each other via a second pipe; and

wherein said first radiator includes an inlet and an outlet, and said second radiator includes a third pipe for fluid communication between one of the coolant channel and the other of the coolant thereof;

whereby coolant circulates from the input to the output via the coolant channels of said radiators and said first through third pipes.