Line component and semiconductor circuit using line component
First Claim
1. A line component in which a power supply interconnection and a ground interconnection or a ground surface are disposed in opposed relation via a first dielectric, wherein a covering which covers the line component is provided, that a second dielectric having a higher permittivity than silicon oxide is provided on the other surface which is not opposed to the ground interconnection or ground surface of the power supply interconnection, and that the second dielectric has a permittivity larger than the permittivity of the covering, wherein the second dielectric comprises LaAlO3, wherein the permittivity of the second dielectric is six times larger than the permittivity of the covering, and wherein the covering comprises SiO2.
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Accused Products
Abstract
A semiconductor circuit in which low impedance characteristics required for a decoupling circuit are ensured up to a band of several hundreds of MHz or above in the situation where digital circuits are rushing into GHz age, and a semiconductor circuit exhibiting low impedance characteristics even in a band of several hundreds of MHz or above. A line element comprising a power supply line and a ground line or a ground plane arranged oppositely through a dielectric, characterized in that a dielectric covering the line element is provided.
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Citations
12 Claims
- 1. A line component in which a power supply interconnection and a ground interconnection or a ground surface are disposed in opposed relation via a first dielectric, wherein a covering which covers the line component is provided, that a second dielectric having a higher permittivity than silicon oxide is provided on the other surface which is not opposed to the ground interconnection or ground surface of the power supply interconnection, and that the second dielectric has a permittivity larger than the permittivity of the covering, wherein the second dielectric comprises LaAlO3, wherein the permittivity of the second dielectric is six times larger than the permittivity of the covering, and wherein the covering comprises SiO2.
- 5. A line component which has at least a first dielectric formed in a substantially constant thickness on a semiconductor substrate or a conductor layer and a first conductor formed on the dielectric, wherein a second dielectric having a higher permittivity than silicon oxide is formed on the first conductor, that the first dielectric is formed by specifying the length of the first dielectric relative to the traveling direction of a high-frequency wave traveling in the dielectric to a prescribed length, that a covering of an insulator which covers the line component is provided, and that the second dielectric has a permittivity larger than the permittivity of the covering, wherein the second dielectric comprises LaAlO3, wherein the permittivity of the second dielectric is six times larger than the permittivity of the covering, and wherein the covering comprises SiO2.
Specification