Semiconductor device and method of forming stepped-down RDL and recessed THV in peripheral region of the device
First Claim
1. A method of making a semiconductor device, comprising:
- providing a semiconductor wafer having a plurality of semiconductor die each with a peripheral region around the semiconductor die;
forming an insulating layer over the semiconductor wafer;
removing a portion of the insulating layer and peripheral region to form a recess around the semiconductor die;
depositing a first conductive layer over the insulating layer and recess, the first conductive layer being electrically connected to contact pads on the semiconductor die and conforming to a step into the recess;
creating a gap through the first conductive layer and peripheral region around the semiconductor die;
depositing an insulating material in the gap;
removing a portion of the insulating material to form a through hole via (THV);
depositing a conductive material in the THV to form a conductive THV, the conductive THV being recessed with respect to a surface of the semiconductor die, the conductive THV being electrically connected to the first conductive layer; and
singulating the semiconductor wafer through the gap to separate the semiconductor die.
6 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.
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Citations
20 Claims
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1. A method of making a semiconductor device, comprising:
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providing a semiconductor wafer having a plurality of semiconductor die each with a peripheral region around the semiconductor die; forming an insulating layer over the semiconductor wafer; removing a portion of the insulating layer and peripheral region to form a recess around the semiconductor die; depositing a first conductive layer over the insulating layer and recess, the first conductive layer being electrically connected to contact pads on the semiconductor die and conforming to a step into the recess; creating a gap through the first conductive layer and peripheral region around the semiconductor die; depositing an insulating material in the gap; removing a portion of the insulating material to form a through hole via (THV); depositing a conductive material in the THV to form a conductive THV, the conductive THV being recessed with respect to a surface of the semiconductor die, the conductive THV being electrically connected to the first conductive layer; and singulating the semiconductor wafer through the gap to separate the semiconductor die. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of making a semiconductor device, comprising:
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providing a semiconductor wafer having a plurality of semiconductor die each with a peripheral region around the semiconductor die; forming an insulating layer over the semiconductor wafer; removing a portion of the insulating layer and peripheral region to form a recess around the semiconductor die; creating a gap through the peripheral region around the semiconductor die; depositing an insulating material in the gap; depositing a conductive layer over the insulating layer and insulating material, the conductive layer being electrically connected to contact pads on the semiconductor die; removing a portion of the insulating material to form a through hole via (THV); depositing a conductive material in the THV to form a conductive THV, the conductive THV being electrically connected to the conductive layer; and singulating the semiconductor wafer through the gap to separate the semiconductor die. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method of making a semiconductor device, comprising:
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providing a semiconductor die having a peripheral region around the semiconductor die; forming an insulating layer over the semiconductor die; removing a portion of the insulating layer and peripheral region to form a recess around the semiconductor die; depositing a first conductive layer over the insulating layer and recess, the first conductive layer being electrically connected to contact pads on the semiconductor die and conforming to a step into the recess; creating a gap through the first conductive layer and peripheral region around the semiconductor die; depositing an insulating material in the gap; removing a portion of the insulating material to form a through hole via (THV); and depositing a conductive material in the THV to form a conductive THV, the conductive THV being recessed with respect to a surface of the semiconductor die, the conductive THV being electrically connected to the first conductive layer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification