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Semiconductor device and method of forming stepped-down RDL and recessed THV in peripheral region of the device

  • US 7,659,145 B2
  • Filed: 07/14/2008
  • Issued: 02/09/2010
  • Est. Priority Date: 07/14/2008
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • providing a semiconductor wafer having a plurality of semiconductor die each with a peripheral region around the semiconductor die;

    forming an insulating layer over the semiconductor wafer;

    removing a portion of the insulating layer and peripheral region to form a recess around the semiconductor die;

    depositing a first conductive layer over the insulating layer and recess, the first conductive layer being electrically connected to contact pads on the semiconductor die and conforming to a step into the recess;

    creating a gap through the first conductive layer and peripheral region around the semiconductor die;

    depositing an insulating material in the gap;

    removing a portion of the insulating material to form a through hole via (THV);

    depositing a conductive material in the THV to form a conductive THV, the conductive THV being recessed with respect to a surface of the semiconductor die, the conductive THV being electrically connected to the first conductive layer; and

    singulating the semiconductor wafer through the gap to separate the semiconductor die.

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