Apparatus and method for controlled particle beam manufacturing

• US 7,659,526 B2
• Filed: 08/20/2007
• Issued: 02/09/2010
• Est. Priority Date: 07/08/2005
• Status: Active Grant

• Current Assignee: Nexgen Semi Holding, Inc.
• Original Assignee: Nexgen Semi Holding, Inc.
• Inventors: Bennahmias, Mark Joseph, Scott, Jeffrey Winfield, Zani, Michael John, Mayse, Mark Anthony
• Primary Examiner(s): NGUYEN, KIET TUAN
• Application Number:
  US11/841,565
• Publication Number:
  US 20070284537A1
• Time in Patent Office: 904 Days
• Field of Search: 250/492.21, 250/309, 438/483, 486/515, 486/516, 486/520
• US Class Current: 250/492.21
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01J 2237/0432 High speed and short duration
• CPC Class Codes: H01J 2237/047 Changing particle velocity
• CPC Class Codes: H01J 2237/30472 Controlling the beam
• CPC Class Codes: H01J 2237/31713 Focused ion beam
• CPC Class Codes: H01J 2237/31732 Depositing thin layers on selected microareas
• CPC Class Codes: H01J 2237/31735 Direct-write microstructures
• CPC Class Codes: H01J 2237/31737 using ions
• CPC Class Codes: H01J 2237/3174 Etching microareas
• CPC Class Codes: H01J 2237/31749 Focused ion beam
• CPC Class Codes: H01J 2237/3175 Lithography
• CPC Class Codes: H01J 2237/31766 Continuous moving of wafer
• CPC Class Codes: H01J 37/045 Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
• CPC Class Codes: H01J 37/3007 Electron or ion-optical systems
• CPC Class Codes: H01J 37/304 Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
• CPC Class Codes: H01J 37/3056 for microworking, e. g. etching of gratings or trimming of electrical components
• CPC Class Codes: H01J 37/3172 Maskless patterned ion implantation
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography
• CPC Class Codes: H01J 37/3177 Multi-beam, e.g. fly's eye, comb probe
• CPC Class Codes: H01L 21/265 : producing ion implantation
• CPC Class Codes: H01L 21/26513 : of electrically active species
• CPC Class Codes: H01L 21/76267 : Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
• CPC Class Codes: H01L 21/84 : the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/0629 : in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 29/66462 : with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
• CPC Class Codes: H01L 29/66659 : with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
• CPC Class Codes: Y10T 428/24802 : Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
• CPC Class Codes: Y10T 428/24893 : including particulate material

Abstract

A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Claims

1. A method of implanting particles into a workpiece, the method comprising:

forming a digital beam comprising a steady stream of pulsed charged particles where the travel of each pulse is temporally synchronized with geometry of a deflector for deflecting each pulse resulting in independent control of each pulse; and

independently directing the each pulse towards the workpiece in an exposure chamber.

2. The method of claim 1, wherein a dosage of the digital beam is less than about 5×

10¹⁷ charged particles/cm².

3. The method of claim 1, wherein a dosage of the digital beam is less than about 5×

10¹⁶ charged particles/cm².

4. The method of claim 1, wherein a dosage of the digital beam is less than about 5×

10¹⁴ charged particles/cm².

5. The method of claim 1, wherein a dosage of the digital beam is less than about 5×

10¹³ charged particles/cm².

6. The method of claim 1, wherein a dosage of the digital beam is less than about 5×

10¹² charged particles/cm².

7. The method of claim 1, wherein a dosage of the digital beam is less than about 5×

10¹¹ charged particles/cm².

8. The method of claim 1, wherein a dosage of the digital beam is less than about 5×

10¹⁰ charged particles/cm².

9. The method of claim 1, wherein the workpiece is resistless while directing the digital beam.

10. The method of claim 1, further comprising, during directing the digital beam, exposing a surface of the workpiece to a reactant.

11. The method of claim 1, further comprising annealing the implanted particles.

12. The method of claim 1, wherein forming the digital beam comprises:

forming a stream of the particles;

collimating the stream along an axis of propagation; and

digitizing the stream.

13. The method of claim 1, wherein forming the digital beam comprises creating temporally and spatially resolved digital flashes comprising at least one particle per digital flash.

14. The method of claim 1, wherein directing the digital beam comprises:

deflecting the digital beam using a series of deflection stages disposed longitudinally along an axis of propagation of the beam; and

demagnifying the digital beam.

15. A workpiece manufactured by the method of claim 1.

16. A method of implanting at least one dopant into a workpiece, the method comprising:

forming a beam comprising at least one ion species;

altering at least a spacing between ions in the beam so as to convert the beam into a digital beam; and

exposing the digital beam onto the workpiece.

17. The method of claim 16, wherein the parameter comprises ion species.

18. The method of claim 16, wherein the parameter comprises beam energy.

19. The method of claim 18, wherein altering the beam energy comprises varying the beam energy between about 5 and 500 keV.

20. The method of claim 18, wherein altering the beam energy comprises varying the beam energy between about 5 and 200 keV.

21. The method of claim 18, wherein altering the beam energy is during directing the beam across a distance of about 20 nm on the workpiece.

22. The method of claim 16, wherein the parameter comprises a density of particles in the beam.

23. The method of claim 16, wherein altering the parameter is during directing the beam across a transistor on the workpiece.

24. The method of claim 16, wherein altering the parameter is during directing the beam across a die on the workpiece.

25. The method of claim 16, wherein forming the beam comprises forming a digital beam.

26. A workpiece manufactured by the method of claim 16.

27. A method of processing to implant particles into a workpiece, the method comprising:

forming a digital beam comprising said particles;

adjusting a spacing of said particles to conform to a geometry of deflector; and

directing the digital beam towards the workpiece on a movable stage in an exposure chamber.

28. A method of implanting at least one dopant into a workpiece, the method comprising:

directing a digital beam comprising at least one ion species onto the workpiece; and

during the directing, altering at least one parameter of the digital beam to conform to a parameter of a deflector for deflecting the ions species.