Power semiconductor device with current sense capability
First Claim
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1. A power semiconductor device comprising:
- a power device formed in a semiconductor region of one conductivity;
a current sense device formed in said semiconductor region, said current sense device including,a plurality of active cells each including a base region of another conductivity formed in said semiconductor region, and a conductive region of said one conductivity formed in each said base region spaced from said semiconductor region of said one conductivity by an invertible region of said another conductivity;
a transistor gate adjacent said invertible region;
a plurality inactive cells of said another conductivity disposed at the outer boundary of said active region; and
a first power electrode in electrical contact with said conductive region of said one conductivity;
wherein said transistor gate extends over at least a portion of a respective inactive cell, said transistor gate including a gate electrode which is shorted to said first power electrode, wherein said active cells are a plurality of spaced stripes arranged in a row and said inactive cells include a first stripe shaped region of said another conductivity adjacent a first one of said active cells and a second stripe shaped region adjacent a last one of said active cells.
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Abstract
A power semiconductor device includes a power device and a current sense device formed in a common semiconductor region.
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Citations
20 Claims
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1. A power semiconductor device comprising:
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a power device formed in a semiconductor region of one conductivity; a current sense device formed in said semiconductor region, said current sense device including, a plurality of active cells each including a base region of another conductivity formed in said semiconductor region, and a conductive region of said one conductivity formed in each said base region spaced from said semiconductor region of said one conductivity by an invertible region of said another conductivity; a transistor gate adjacent said invertible region; a plurality inactive cells of said another conductivity disposed at the outer boundary of said active region; and a first power electrode in electrical contact with said conductive region of said one conductivity; wherein said transistor gate extends over at least a portion of a respective inactive cell, said transistor gate including a gate electrode which is shorted to said first power electrode, wherein said active cells are a plurality of spaced stripes arranged in a row and said inactive cells include a first stripe shaped region of said another conductivity adjacent a first one of said active cells and a second stripe shaped region adjacent a last one of said active cells. - View Dependent Claims (2, 3, 4, 5)
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6. A power semiconductor device comprising:
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a power device formed in a semiconductor region of one conductivity; a current sense device formed in said semiconductor region, said current sense device including, an active region having a plurality of active cells, each active cell including a base region of another conductivity formed in said semiconductor region, and a conductive region of said one conductivity formed in each said base region spaced from said semiconductor region of said one conductivity by an invertible region of said another conductivity; a transistor gate adjacent said invertible region; and a plurality of inactive cells of said another conductivity disposed at the outer boundary of said active region; wherein said active cells are a plurality of spaced stripes arranged in a row and said inactive cells include a first stripe shaped region of said another conductivity adjacent a first one of said active cells and a second stripe shaped region adjacent a last one of said active cells. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A power semiconductor device comprising:
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a power device formed in a semiconductor region of one conductivity; a current sense device including an active region having a plurality of active cells, each active cell including a base region of an opposite conductivity formed in said semiconductor region, and a conductive region of said one conductivity formed in each said base region spaced apart by an invertible region of said opposite conductivity; a transistor gate adjacent said invertible region; and a plurality of inactive cells of said opposite conductivity disposed in said active region; wherein said active cells are a plurality of spaced stripes arranged in a row and said inactive cells include a first stripe shaped region of said opposite conductivity. - View Dependent Claims (17, 18, 19, 20)
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Specification