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Power semiconductor device with current sense capability

  • US 7,659,577 B2
  • Filed: 06/29/2006
  • Issued: 02/09/2010
  • Est. Priority Date: 07/01/2005
  • Status: Active Grant
First Claim
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1. A power semiconductor device comprising:

  • a power device formed in a semiconductor region of one conductivity;

    a current sense device formed in said semiconductor region, said current sense device including,a plurality of active cells each including a base region of another conductivity formed in said semiconductor region, and a conductive region of said one conductivity formed in each said base region spaced from said semiconductor region of said one conductivity by an invertible region of said another conductivity;

    a transistor gate adjacent said invertible region;

    a plurality inactive cells of said another conductivity disposed at the outer boundary of said active region; and

    a first power electrode in electrical contact with said conductive region of said one conductivity;

    wherein said transistor gate extends over at least a portion of a respective inactive cell, said transistor gate including a gate electrode which is shorted to said first power electrode, wherein said active cells are a plurality of spaced stripes arranged in a row and said inactive cells include a first stripe shaped region of said another conductivity adjacent a first one of said active cells and a second stripe shaped region adjacent a last one of said active cells.

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