High frequency switching circuit

• US 7,659,770 B2
• Filed: 04/09/2008
• Issued: 02/09/2010
• Est. Priority Date: 04/17/2007
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Teraguchi, Takayuki, Kawakyu, Katsue
• Primary Examiner(s): Donovan; Lincoln
• Assistant Examiner(s): Hernandez; William
• Application Number:
  US12/099,858
• Publication Number:
  US 20080258799A1
• Time in Patent Office: 671 Days
• Field of Search: 327/427, 327/534
• US Class Current: 327/534
• CPC Class Codes: H03K 17/005 with several inputs only
• CPC Class Codes: H03K 17/161 in field-effect transistor switches
• CPC Class Codes: H03K 17/302 in field-effect transistor switches
• CPC Class Codes: H03K 17/6871 the output circuit comprising more than one controlled field-effect transistor
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00
• CPC Class Codes: H03K 2217/0018 Special modifications or use of the back gate voltage of a FET

Abstract

A high frequency switching circuit is disclosed. The high frequency switching circuit is provided with first and second high frequency signal terminals, a control terminal, a field-effect transistor having a drain, a source and a gate. The field-effect transistor is connected between the first and the second high frequency signal terminals so as to switch a high frequency signal. The high frequency switching circuit is further provided with a variable resistance circuit which is connected between the gate of the field-effect transistor and the control terminal.

Claims

1. A high frequency switching circuit comprising:

first and second high frequency signal terminals;

a first control terminal;

a power supply terminal;

a first field-effect transistor having a drain, a source, a gate, and a back gate, the first field-effect transistor being connected between the first and the second high frequency signal terminals to switch higher frequency signals;

a first variable resistance circuit connected between the gate of the first field-effect transistor and the first control terminal; and

a second variable resistance circuit connected between the back gate and the power supply,

wherein each of the resistance values of the first and the second variable resistance circuits is lower in an OFF state of the first field-effect transistor than in an ON state of the first field-effect transistor.

2. The high frequency switching circuit according to claim 1, wherein each of the first and the second variable resistance circuits is provided with a resistance and a field-effect transistor connected in parallel with each other.

3. The high frequency switching circuit according to claim 1, wherein each of the first and the second variable resistance circuits is provided with a normally-on type field-effect transistor.

4. The high frequency switching circuit according to claim 1, further comprising a second field-effect transistor having a drain, a source and a gate, the second field-effect transistor being connected between one of the drain and the source of the first field-effect transistor and a power supply terminal.

5. The high frequency switching circuit according to claim 4, further comprising a second control terminal and a third variable resistance circuit connected between the second control terminal and the gate of the second field-effect transistor.

6. The high frequency switching circuit according to claim 5, wherein the second field-effect transistor has a back gate to which a fourth variable resistance circuit is connected.

18. The high frequency switching circuit according to claim 1, wherein the resistance values of the first and the second variable resistance circuits are controlled by a control signal being provided to the second control terminal.

7. A high frequency switching circuit comprising:

first and second high frequency signal terminals;

a power supply terminal;

a first control terminal;

a first field-effect transistor having a drain, a source and a gate, the first field-effect transistor being connected between the first and the second high frequency signal terminals to switch a higher frequency signal;

a second field-effect transistor having a drain, a source, a gate and a back gate, the second field-effect transistor being connected between the first high frequency signal terminal and the power supply terminal;

a third variable resistance circuit connected between the gate of the second field-effect transistor and the second control terminal; and

a fourth variable resistance circuit connected between the back gate of the second field-effect transistor and the power supply terminal,

wherein each of the resistance values of the third and the fourth variable resistance circuits is lower in an OFF state of the second field-effect transistor than in an ON state of the second field-effect transistor.

8. The high frequency switching circuit according to claim 7, wherein each of the third and the fourth variable resistance circuits is provided with a resistance and a field-effect transistor connected in parallel with each other.

9. The high frequency switching circuit according to claim 7, wherein each of the third and the fourth variable resistance circuits is provided with a normally-on type field-effect transistor, and each of the gates of the normally-on type field-effect transistors is connected to the first control terminal.

10. The high frequency switching circuit according to claim 7, further comprising a first variable resistance circuit, the first variable resistance being connected between the gate of the first field-effect transistor and the first control terminal.

19. The high frequency switching circuit according to claim 7, wherein the resistance values of the third and the fourth variable resistance circuits are controlled by a control signal being provided to the first control terminal.

11. A high frequency switching circuit comprising:

a pair of first high frequency signal terminals;

a second high frequency signal terminal serving as a common high frequency signal terminal;

first and second control terminals;

a power supply terminal;

a pair of first field-effect transistors respectively having a drain, a source a gate and a back gate, the first field-effect transistors being respectively connected between the first high frequency signal terminals and the second high frequency signal terminal

a pair of first variable resistance circuits connected between the gates of the first field-effect transistors and the first and second control terminals respectively; and

a pair of second variable resistance circuits connected between the back gate of the first field-effect transistors and the power supply terminal,

wherein each of the resistance values of the first and the second variable resistance circuits is lower in an OFF state of the first field-effect transistors than in an ON state of the first field-effect transistors.

12. The high frequency switching circuit according to claim 11, wherein each of the first and the second variable resistance circuit is provided with a resistance and a field-effect transistor connected in parallel with each other.

13. The high frequency switching circuit according to claim 11, wherein each the first and the second variable resistance circuit is provided with a normally-on type field-effect transistor.

14. The high frequency switching circuit according to claim 11, further comprising a pair of second field-effect transistors having drains, sources and gates respectively, the second field-effect transistors being respectively connected between the first high frequency signal terminals and a power supply terminal, and the gates being connected to the second and the first control terminals respectively.

15. The high frequency switching circuit according to claim 14, further comprising a pair of third variable resistance circuits, third variable resistance circuits being connected between the gates of the second field-effect transistors and the second and the first control terminals respectively.

16. The high frequency switching circuit according to claim 15, further comprising a pair of fourth variable resistance circuits, wherein each of the second field-effect transistors has a back gate, and each of the fourth variable resistance circuits is connected between each of the back gates and a power supply terminal.

17. The high frequency switching circuit according to claim 16, wherein the first and second field-effect transistors are N-channel type and the field-effect transistors constituting the fourth variable resistance circuits are P-channel type.

20. The high frequency switching circuit according to claim 11,

wherein the resistance values of the first and the second variable resistance circuits respectively connected to one of the first field-effect transistors are controlled by a second control signal being provided to the second control terminal,

and wherein the resistance values of the first and the second variable resistance circuits respectively connected to the other of the first field-effect transistors are controlled by a first control signal being provided to the first control terminal.