Programming method to reduce gate coupling interference for non-volatile memory
First Claim
1. A method of programming non-volatile memory cells of a non-volatile memory array, comprising:
- receiving first write data and second write data; and
adjusting the programming of the first write data into a first plurality of memory cells of a non-volatile memory array to compensate for interference by the subsequent programming of the second write data into a second plurality of memory cells of the non-volatile memory array, wherein the memory cells of the first plurality are physically adjacent the memory cells of the second plurality in the non-volatile memory array.
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Abstract
A non-volatile memory device and programming process is described that compensates for coupling effects on threshold gate voltages of adjacent floating gate or non-conductive floating node memory cells by adjusting the threshold voltage level programmed in view of the data being programmed on a following programming cycle into adjacent memory cells, so that the coupling effect results in the desired target threshold voltages for the cells. In one embodiment of the present invention, memory cell coupling is compensated for by adjusting programming level of one or more memory cells of a first page a memory array to a higher or lower threshold verify target voltage given the data/programming level to be written to directly adjacent memory cells of a second page, so that coupling between the directly adjacent memory cells of the first and second pages brings the memory cells of first page to their final target programming level.
107 Citations
20 Claims
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1. A method of programming non-volatile memory cells of a non-volatile memory array, comprising:
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receiving first write data and second write data; and adjusting the programming of the first write data into a first plurality of memory cells of a non-volatile memory array to compensate for interference by the subsequent programming of the second write data into a second plurality of memory cells of the non-volatile memory array, wherein the memory cells of the first plurality are physically adjacent the memory cells of the second plurality in the non-volatile memory array. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of programming non-volatile memory cells of a NAND architecture memory array having a plurality of NAND architecture memory strings, comprising:
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receiving first write data and second write data; selecting a first plurality of non-volatile memory cells from a plurality of the NAND architecture memory strings; and adjusting the programming of the first write data into the first plurality of non-volatile memory cells to compensate for interference by the subsequent programming of the second write data into a second plurality of non-volatile memory cells of the plurality of the NAND architecture memory strings; wherein each non-volatile memory cell of the first plurality of non-volatile memory cells is directly adjacent a non-volatile memory cell of the second plurality of non-volatile memory cells. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification