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Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer

  • US 7,662,729 B2
  • Filed: 04/28/2005
  • Issued: 02/16/2010
  • Est. Priority Date: 04/28/2005
  • Status: Expired due to Fees
First Claim
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1. A method of forming an electronic device, the method comprising:

  • forming a lanthanide oxide layer by atomic layer deposition;

    forming a ruthenium-based conductive layer using atomic layer deposition such that ruthenium contacts the lanthanide oxide layer;

    forming metallization to a device in which the lanthanide oxide layer and the ruthenium-based conductive layer are disposed; and

    annealing the metallization, lanthanide oxide layer, and the ruthenium-based conductive layer in a H2 ambient, wherein forming the lanthanide oxide layer by atomic layer deposition includes using a Ln(thd)3 (thd =2,2,6,6-tetramethyl-3,5-heptanedione) precursor in the atomic layer deposition.

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