Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer

• US 7,662,729 B2
• Filed: 04/28/2005
• Issued: 02/16/2010
• Est. Priority Date: 04/28/2005
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Ahn, Kie Y., Forbes, Leonard
• Primary Examiner(s): Coleman; W. David
• Assistant Examiner(s): CRAWFORD, LATANYA N
• Application Number:
  US11/117,125
• Publication Number:
  US 20060244082A1
• Time in Patent Office: 1,755 Days
• Field of Search: 438/287, 438/785, 438/686, 257/410
• US Class Current: 438/785
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: H01L 21/02192 the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/28079 the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 29/495 the conductor material next to the insulator being a simple metal, e.g. W, Mo H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

Electronic apparatus and methods of forming the electronic apparatus include a conductive layer having a layer of ruthenium in contact with a lanthanide oxide dielectric layer for use in a variety of electronic systems. The lanthanide oxide dielectric layer and the layer of ruthenium may be structured as one or more monolayers. The lanthanide oxide dielectric layer and the layer of ruthenium may be formed by atomic layer deposition.

Claims

1. A method of forming an electronic device, the method comprising:

forming a lanthanide oxide layer by atomic layer deposition;

forming a ruthenium-based conductive layer using atomic layer deposition such that ruthenium contacts the lanthanide oxide layer;

forming metallization to a device in which the lanthanide oxide layer and the ruthenium-based conductive layer are disposed; and

annealing the metallization, lanthanide oxide layer, and the ruthenium-based conductive layer in a H₂ ambient, wherein forming the lanthanide oxide layer by atomic layer deposition includes using a Ln(thd)₃ (thd =2,2,6,6-tetramethyl-3,5-heptanedione) precursor in the atomic layer deposition.

2. A method of forming an electronic device, the method comprising:

forming a lanthanide oxide layer by atomic layer deposition;

forming a ruthenium-based conductive layer using atomic layer deposition such that ruthenium contacts the lanthanide oxide layer;

forming metallization to a device in which the lanthanide oxide layer and the ruthenium-based conductive layer are disposed; and

annealing the metallization, lanthanide oxide layer, and the ruthenium-based conductive layer in a H₂ ambient wherein forming a ruthenium-based conductive layer using atomic layer deposition includes using a Ru(od)₃ (od =octane-2,4-dionate)/m-butyl-acetate solution in the atomic layer deposition.

3. A method of forming an electronic device, the method comprising:

forming a lanthanide oxide layer by atomic layer deposition;

forming a ruthenium-based conductive layer using atomic layer deposition such that ruthenium contacts the lanthanide oxide layer;

forming metallization to a device in which the lanthanide oxide layer and the ruthenium-based conductive layer are disposed; and

annealing the metallization, lanthanide oxide layer, and the ruthenium-based conductive layer in a H₂ ambient, wherein forming a ruthenium-based conductive layer using atomic layer deposition includes using a bis(ethylcyclopentadienyl)ruthenium precursor in the atomic layer deposition.

4. The method of claim, A method of forming a memory device, the method comprising:

forming a memory array in a substrate including;

forming a lanthanide oxide layer by atomic layer deposition in an integrated circuit in the substrate;

forming a ruthenium-based conductive layer such that ruthenium contacts the lanthanide oxide layer;

forming metallization to a device in which the lanthanide oxide layer and the ruthenium-based conductive layer are disposed in the integrated circuit; and

annealing the metallization, the lanthanide oxide layer, and the ruthenium-based conductive layer in a H₂ ambient; and

forming circuitry to access the memory array, wherein forming a lanthanide oxide layer by atomic layer deposition includes using a Ln(thd)₃ (thd =2,2,6,6-tetramethyl-3,5-heptanedione) precursor in the atomic layer deposition.

5. A method of forming a memory device, the method comprising:

forming a memory array in a substrate including;

forming a lanthanide oxide layer by atomic layer deposition in an integrated circuit in the substrate;

forming a ruthenium-based conductive layer such that ruthenium contacts the lanthanide oxide layer;

forming metallization to a device in which the lanthanide oxide layer and the ruthenium-based conductive layer are disposed in the integrated circuit; and

annealing the metallization, the lanthanide oxide layer, and the ruthenium-based conductive layer in a H₂ ambient; and

forming circuitry to access the memory array, wherein forming a ruthenium-based conductive layer includes using a Ru(od)₃ (od =octane-2,4-dionate)/m-butyl-acetate solution in atomic layer deposition.

6. A method of forming an electronic system, the method comprising:

providing a controller;

coupling an integrated circuit to the controller, wherein one or more of the controller or the integrated circuit includes a lanthanide oxide contacting a ruthenium-based conductive layer, wherein forming the lanthanide oxide contacting the ruthenium-based conductive layer includes;

forming the lanthanide oxide layer by atomic layer deposition;

forming the ruthenium-based conductive layer using atomic layer deposition such that ruthenium contacts the lanthanide oxide layer;

forming metallization to a device in which the lanthanide oxide layer and the ruthenium-based conductive layer are disposed; and

annealing the metallization, lanthanide oxide layer, and the ruthenium-based conductive layer in a H₂ ambient wherein forming the lanthanide oxide layer by atomic layer deposition includes using a Ln(thd)₃ (thd =2,2,6,6-tetramethyl-3,5-heptanedione) precursor in the atomic layer deposition.

7. A method of forming an electronic system, the method comprising:

providing a controller;

coupling an integrated circuit to the controller, wherein one or more of the controller or the integrated circuit includes a lanthanide oxide contacting a ruthenium-based conductive layer, wherein forming the lanthanide oxide contacting the ruthenium-based conductive layer includes;

forming the lanthanide oxide layer by atomic layer deposition;

forming the ruthenium-based conductive layer using atomic layer deposition such that ruthenium contacts the lanthanide oxide layer;

forming metallization to a device in which the lanthanide oxide layer and the ruthenium-based conductive layer are disposed; and

annealing the metallization, lanthanide oxide layer, and the ruthenium-based conductive layer in a H₂ ambient wherein forming the ruthenium-based conductive layer using atomic layer deposition includes using a Ru(od)₃ (od =octane-2,4-dionate)/m-butyl-acetate solution in the atomic layer deposition.

8. A method of forming an electronic system, the method comprising:

providing a controller;

coupling an integrated circuit to the controller, wherein one or more of the controller or the integrated circuit includes a lanthanide oxide contacting a ruthenium-based conductive layer, wherein forming the lanthanide oxide contacting the ruthenium-based conductive layer includes;

forming the lanthanide oxide layer by atomic layer deposition;

forming the ruthenium-based conductive layer using atomic layer deposition such that ruthenium contacts the lanthanide oxide layer;

forming metallization to a device in which the lanthanide oxide layer and the ruthenium-based conductive layer are disposed; and

annealing the metallization, lanthanide oxide layer, and the ruthenium-based conductive layer in a H₂ ambient wherein forming the ruthenium-based conductive layer using atomic layer deposition includes using a bis(ethylcyclopentadienyl)ruthenium precursor in the atomic layer deposition.