Vertical floating body cell of a semiconductor device and method for fabricating the same

• US 7,663,188 B2
• Filed: 10/03/2007
• Issued: 02/16/2010
• Est. Priority Date: 07/27/2007
• Status: Expired due to Fees

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Chung, Sung Woong
• Primary Examiner(s): Nguyen; Thinh T
• Application Number:
  US11/866,950
• Publication Number:
  US 20090026541A1
• Time in Patent Office: 867 Days
• Field of Search: 257/296, 257/348, 257/347, 257/E21.41, 257/E29.262, 438/156, 438/149, 438/479, 438/517
• US Class Current: 257/347
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/7841 with floating body, e.g. programmable transistors
• CPC Class Codes: H10B 12/20 DRAM devices comprising floating-body transistors, e.g. floating-body cells

Abstract

A semiconductor device includes a tube-type channel formed over a semiconductor substrate. The tube-type channel is connected to first and second conductive lines. A bias electrode is formed in the tube-type channel. The bias electrode is connected to the semiconductor substrate. An insulating film is disposed between the tube-type channel and the bias electrode. A surrounding gate electrode is formed over the tube-type channel.

Claims

1. A semiconductor device having a floating body cell structure, the device comprising:

a tube-type channel formed over a semiconductor substrate and connected to first and second conductive lines;

a bias electrode formed in the tube-type channel and connected to the semiconductor substrate;

an insulating film located between the tube-type channel and the bias electrode; and

a surrounding gate electrode formed over the tube-type channel.

2. The semiconductor device according to claim 1 wherein the first conductive line is connected to a bottom of the tube-type channel.

3. The semiconductor device according to claim 1, wherein the second conductive line is connected to a top of the tube-type channel.

4. The semiconductor device according to claim 1, wherein a top surface of the tube-type channel is circular or polygonal.