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Light emitting device and method of manufacturing the same

  • US 7,663,305 B2
  • Filed: 06/24/2003
  • Issued: 02/16/2010
  • Est. Priority Date: 06/27/2002
  • Status: Expired due to Fees
First Claim
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1. A light emitting device comprising:

  • a substrate having an insulating surface;

    a thin film transistor formed over the substrate;

    an insulating film formed over the thin film transistor;

    a first electrode formed over the insulating film and connected to the thin film transistor through the insulating film;

    a partition wall covering an edge of the first electrode and formed over the insulating film;

    a layer comprising an organic compound formed over and in contact with the first electrode; and

    a second electrode in contact with the layer comprising an organic compound,wherein the partition wall comprises a laminate of an organic resin layer and a light-absorbing layer including at least a reflective metal film, a first light transmissive insulating film comprising nitride, a metal nitride film and, a second light-transmissive insulating film comprising nitride,wherein the organic resin layer comprises a top surface and a side surface, the side surface being tapered,wherein the light absorbing layer entirely covers the top surface of the organic resin layer, andwherein the layer comprising an organic compound is in contact with the side surface of the organic resin layer.

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