Selective deposition of noble metal thin films

• US 7,666,773 B2
• Filed: 03/14/2006
• Issued: 02/23/2010
• Est. Priority Date: 03/15/2005
• Status: Active Grant

• Current Assignee: ASM International NV
• Original Assignee: ASM International NV
• Inventors: Tuominen, Marko, Leinikka, Miika, Huotari, Hannu
• Primary Examiner(s): Kebede; Brook
• Application Number:
  US11/376,704
• Publication Number:
  US 20070026654A1
• Time in Patent Office: 1,442 Days
• Field of Search: 438/758, 438/765, 438/770, 438/784, 438/785, 438/787, 438/789, 438/790, 438/584, 438/585, 257/E21.637
• US Class Current: 438/584
• CPC Class Codes: C23C 16/32 Carbides
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/38 Borides
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: H01L 21/28079 the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/66583 with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts

Abstract

Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.

Claims

1. A method for selectively depositing a thin film comprising one or more noble metals on a substrate comprising a first surface and a second surface, the method comprising:

contacting the substrate with a gaseous noble metal precursor;

providing a second reactant gas pulse comprising oxygen to the reaction chamber; and

repeating until a thin film of a desired thickness is obtained selectively on the first surface,

wherein the second surface comprises a material selected from the group consisting of silicon oxides, silicon nitrides, silicon oxynitrides, fluorinated silica glass (FSG), carbon doped silicon oxide (SiOC) and materials containing more than about 50% silicon oxide and wherein the temperature is below about 400°

C.

2. The process of claim 1, additionally comprising removing excess noble metal precursor from the reaction chamber after contacting the substrate with the noble metal precursor and prior to providing the second reactant gas pulse.

3. The process of claim 1, wherein the thin film is not formed on the second surface.

4. The process of claim 1, wherein the thin film that is obtained is thicker on the first surface than on the second surface.

5. The process of claim 1, wherein the second surface is SiO₂.

6. The process of claim 1, wherein the second surface is silicon oxynitride.

7. The process of claim 1, wherein the noble metal is ruthenium.

8. The process of claim 7, wherein the noble metal precursor is Ru(EtCp)₂.

9. The process of claim 1, wherein the first surface comprises a high-k material.

10. The process of claim 9, wherein the high-k material is selected from the group consisting of HfO₂, ZrO₂, Al₂O₃, TiO₂, Ta₂O₅, Sc₂O₃, lanthanide oxides and mixtures thereof, silicates, yttria-stabilized zirconia (YSZ), barium strontium titanate (BST), strontium titanate (ST), strontium bismuth tantalate (SBT) and bismuth tantalate (BT).

11. The process of claim 9, wherein the high-k material is hafnium oxide (HfO₂).

12. The process of claim 9, wherein the high-k material has a dielectric constant greater than 10.

13. The process of claim 1, wherein the first surface comprises a material selected from the group consisting of metals, metal nitrides, metal carbides, metal borides, conductive oxides and mixtures thereof.

14. The process of claim 13, wherein the first surface comprises a material selected from the group consisting of Ta, TaN, TaC_x, TaB_x, Ti, TiN, TiC_x, TiB_x, Nb, NbN, NbC_x, NbB_x Mo, MoN, MoC_x, MoB_x, W, WN, WC_x, WB_x, V, Cr, Fe, Cu, Co, Ni, Cd, Zn, Al, Ag, Au, Ru, RuO_x, Rh, Pt, Pd, Ir, IrO_x and Os.

15. The process of claim 1, wherein the second reactant gas is provided by pulsing oxygen into the reaction chamber.

16. A method of fabricating a semiconductor device, comprising:

forming a patterned gate dielectric layer over a semiconductor substrate; and

forming a gate electrode over the gate dielectric layer,

wherein forming the gate electrode comprises selectively depositing a film comprising one or more noble metals over the gate dielectric layer by a vapor deposition process, wherein the film comprises ruthenium, and wherein forming the gate electrode additionally comprises depositing a different conductive material over the film comprising ruthenium.

17. A method for selectively depositing a noble metal layer on a substrate comprising a first surface and a second insulating surface, the first surface comprising a high k material, metal, metal nitride or conductive metal oxide, the method comprising depositing a layer comprising a noble metal on the first surface relative to the second surface using an atomic layer deposition (ALD) process at a temperature of less than about 400°

C., wherein both the first surface and second surface are contacted with each of at least two reactants.

18. The method of claim 17, wherein the insulating surface comprises a form of silicon oxide.