Hybrid window layer for photovoltaic cells
First Claim
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1. A novel photovoltaic solar cell comprising:
- at least one absorber layer, andat least one doped window layer having at least two p-type sub-window layers, wherein a first p-type sub-window layer is adjacent the absorber layer and forms a desirable junction with the absorber layer and wherein a second p-type sub-window layer is adjacent the first p-type sub-window layer and has high optical transmission;
wherein the absorber layer comprises at least one of amorphous silicon (a-Si;
H), amorphous silicon germanium (a-Si(1-x)GeX;
H), nanocrystalline silicon (nc-Si;
H), microcrystalline silicon (μ
c-Si;
H), polycrystalline silicon (poly-Si;
H), or other combinations and mixtures thereof;
the first and second p-type sub-window layers each being comprised of nanocrystalline silicon;
wherein the second p-type sub-window layer has a transparency and a thickness that are both greater than the transparency and the thickness of the first p-type sub-window layer.
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Abstract
A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.
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Citations
8 Claims
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1. A novel photovoltaic solar cell comprising:
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at least one absorber layer, and at least one doped window layer having at least two p-type sub-window layers, wherein a first p-type sub-window layer is adjacent the absorber layer and forms a desirable junction with the absorber layer and wherein a second p-type sub-window layer is adjacent the first p-type sub-window layer and has high optical transmission; wherein the absorber layer comprises at least one of amorphous silicon (a-Si;
H), amorphous silicon germanium (a-Si(1-x)GeX;
H), nanocrystalline silicon (nc-Si;
H), microcrystalline silicon (μ
c-Si;
H), polycrystalline silicon (poly-Si;
H), or other combinations and mixtures thereof;the first and second p-type sub-window layers each being comprised of nanocrystalline silicon; wherein the second p-type sub-window layer has a transparency and a thickness that are both greater than the transparency and the thickness of the first p-type sub-window layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A novel photovoltaic solar cell comprising:
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a substrate; at least one absorber layer, and at least one doped window layer having at least two sub-window layers, wherein the first sub-window layer is adjacent the absorber layer and forms a desirable junction with the absorber layer and wherein the second sub-window layer is adjacent the first sub-window layer and has high optical transmission; wherein the absorber layer comprises at least one of amorphous silicon (a-Si;
H), amorphous silicon germanium (a-Si(1-x)Gex;
H), nanocrystalline silicon (nc-Si;
H), microcrystalline silicon (μ
c-Si;
H), polycrystalline silicon (poly-Si;
H), or other combinations and mixtures thereof;the first and second sub-window p-type layers each being comprised of a;
nanocrystalline silicon;wherein the second sub-window p-type layer has a transparency greater than the first sub-window p-type layer, and wherein there is a minimal mismatch between the bandgap of the first sub-window p-type layer and the bandgap of the absorber layer that is adjacent to the first sub-window p-layer; and
,wherein the substrate comprises a stainless steel metal, the first and second p-type sub-window layers comprise a-Si;
H, the absorber layer comprises a-SiGe;
H, and the n-layer comprises a-Si;
H. - View Dependent Claims (8)
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Specification