Resolving thermoelectric potentials during laser trimming of resistors

• US 7,667,159 B2
• Filed: 08/31/2005
• Issued: 02/23/2010
• Est. Priority Date: 09/13/2004
• Status: Active Grant

• Current Assignee: Electro Scientific Industries Incorporated (MKS Instruments Incorporated)
• Original Assignee: Electro Scientific Industries Incorporated (MKS Instruments Incorporated)
• Inventors: McCurry, Brandon, Pailthorp, Robert M.
• Primary Examiner(s): Hoang; Tu B
• Assistant Examiner(s): TRAN, THIEN S
• Application Number:
  US11/218,283
• Publication Number:
  US 20060065646A1
• Time in Patent Office: 1,637 Days
• Field of Search: 219/56, 219/56.1, 219/58, 219/121.12, 219/121.19, 219/121.62, 219/121.68
• US Class Current: 219/121.69
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 2103/52 Ceramics
• CPC Class Codes: B23K 26/0006 taking account of the properties of the material involved B23K26/32, B23K26/40 take precedence
• CPC Class Codes: B23K 26/0624 using ultrashort pulses, i.e. pulses of 1ns or less
• CPC Class Codes: B23K 26/066 by using masks
• CPC Class Codes: B23K 26/351 for trimming or tuning of electrical components
• CPC Class Codes: B23K 26/361 for deburring or mechanical trimming B23K26/351 takes precedence
• CPC Class Codes: H01C 17/242 by laser trimming by laser in general B23K26/351

Abstract

Thermoelectric effects that occur during laser trimming of resistors (20) are resolved by taking voltage measurements. The voltage attributed to laser heating on a resistor (20) during a low-power simulated trim (10) is used to determine a relatively thermal-neutral location (18) on the resistor (20). A trimming-to-value operation can then be performed on all like resistors (20). Voltage measurements can also be taken before and after every pulse in a trimming operation to establish thermal deviation information that can be used to offset the desired trim value against which resistor measurement values are compared. Spatially distant or nonadjacent resistors (20) in a row or column can also be trimmed sequentially to minimize heating effects that might otherwise distort resistance values on adjacent or nearby resistors (20).

Claims

1. A method for employing laser output to trim resistor material from a resistor to change an initial resistance value of the resistor to a nominal resistance value, wherein the resistor material has a surface area positioned between electrical contacts and is supported on a substrate, wherein laser output applied to the resistor material induces thermoelectric effects in the resistor that cause the resistor to exhibit an errant or transient resistance value that deviates from a true or steady state resistance value of the resistor that is measured during an absence of the laser output such that the applied laser output prevents an accurate measurement of the true or steady state resistance value immediately following the applied laser output, a method for reducing resistance value deviations caused by laser-induced thermoelectric effects, comprising:

positioning probes of measurement equipment to be in communication with a single resistor or respective resistors from a set of resistors;

setting an applied current value from the measurement equipment to a reference or zero value;

directing respective sets of one or more evaluation pulses of laser output along respective simulation paths to apply heat to different respective locations on the surface areas of the single resistor or the respective resistors, the evaluation pulses causing insignificant change to the true or steady-state resistance value of the initial resistance value;

measuring voltage values across the single resistor or the respective resistors after the respective sets of evaluation laser pulses to obtain voltage deviation information for each of the different respective locations;

using the voltage deviation information to determine a preferred location on the respective surface areas of the respective resistors that exhibits minimal voltage deviation; and

directing trimming pulses of laser output along a trim path at the preferred location on the surface area of the single resistor or the preferred locations on the surface area of some or all of the set of resistors to remove resistor material from them to change their initial resistance value to a nominal resistance value to reduce thermoelectric resistance deviations induced by the laser output.

2. The method of claim 1 in which each set of evaluation pulses comprises a single laser pulse.

3. The method of claim 1 in which the trim path comprises a plunge-cut profile, an L-cut profile, a serpentine-cut profile, or a surface-ablation profile.

4. The method of claim 1 in which the simulation paths performed at different locations on the surface area of the resistor material are substantially the same.

5. The method of claim 1 in which the simulation paths comprise a raster scan of a portion of the surface area of the single resistor.

6. The method of claim 1 in which the evaluation laser pulses have parameters that are insufficient to cause significant removal of resistor material.

7. The method of claim 1 in which the trimming laser pulses are applied in a tracking trim process wherein a resistance measurement value is obtained after each trimming laser pulse and compared to a desired resistance value and application of the trimming laser pulses is halted when the resistance measurement value is within a predetermined range of the desired resistance value.

8. The method of claim 1 in which the trimming laser pulses are applied in a predictive trim process.

9. The method of claim 1 in which the resistors comprise chip-R resistors.

10. The method of claim 1 in which the resistors comprise low-ohm resistors.

11. The method of claim 1 in which the resistors have a desired resistance value of less than or equal to 0.1 ohms.

12. The method of claim 1 in which the resistors comprise four leads.

13. The method of claim 1 in which the measurement equipment employs a Kelvin measurement technique.

14. The method of claim 1 in which the true resistance value is within 0.1% of the desired resistance value.

15. The method of claim 1 in which the preferred location is a position of relative thermal equilibrium between the contacts.

16. The method of claim 1, further comprising:

processing at the respective preferred locations multiple rows or columns of respective resistors having similar configurations and specifications.

17. The method of claim 1 in which the laser output is generated at a wavelength between 200 nm and 2,000 nm.

18. The method of claim 1 in which the resistor comprises a 0402 or 0201 chip resistor.

19. The method of claim 1 in which the substrate comprises a ceramic material.

20. The method of claim 1 in which the resistor material comprises a thick film resistor material that includes ruthenium oxide.

21. The method of claim 1 in which the resistor material includes a nickel chromium compound or a tantalum nitride compound.

22. The method of claim 1 in which the thermoelectric effects comprise temperature coefficient of resistance effects.

23. The method of claim 1 in which the thermoelectric effects comprise Seebeck or emf effects.

24. The method of claim 1, further comprising:

after determining the preferred location on the resistors, setting the applied current value from the measurement equipment to a desired nonzero value before directing trimming pulses at the single resistor or any respective resistor.

25. The method of claim 1 in which an applied balance voltage value is set to a zero or reference value before directing the evaluation pulses at the resistors.

26. The method of claim 25 in which the applied balance voltage value is set to a desired value before directing the trimming pulses at the single resistor or any respective resistor.

27. The method of claim 1 in which the evaluation laser pulses have parameters that are insufficient to cause significant alteration, after the laser-induced thermoelectric effects have subsided, in the initial resistance value of the single resistor or any respective resistor.

28. The method of claim 1 in which the voltage values are measured through relays of a probe of the measurement equipment that are distant from the resistor being measured.

29. The method of claim 1 in which each resistor is independently evaluated for its particular preferred location.

30. The method of claim 29 in which each resistor is independently evaluated before any of the resistors of the set are trimmed.

31. The method of claim 29 in which each resistor is independently evaluated and trimmed before a subsequent resistor is evaluated.

32. The method of claim 1 in which sequentially evaluated resistors are nonadjacent.

33. The method of claim 1 in which the set of respective resistors include a set of some or all connected resistors.

34. A method for employing laser output to trim resistor material from a resistor to change an initial resistance value of the resistor to a nominal resistance value, wherein the resistor material has a surface area positioned between electrical contacts and is supported on a substrate, wherein laser output applied to the resistor material induces thermoelectric effects in the resistor that cause the resistor to exhibit an errant or transient resistance value that deviates from a true or steady state resistance value of the resistor that is measured during an absence of the laser output such that the applied laser output prevents an accurate measurement of the true or steady state resistance value immediately following the applied laser output, a method for reducing resistance value deviations caused by laser-induced thermoelectric effects, comprising:

positioning probes of measurement equipment to be in communication with a resistor;

setting an applied current value from the measurement equipment to a reference or zero value;

directing low-power pulses of laser output along a simulation path to sequentially apply heat to multiple locations on the surface area of the resistor material;

repeatedly measuring voltage values across the resistor after respective sequential sets of laser pulses to obtain voltage deviation information for some or all of the multiple locations;

using the voltage deviation information to determine a preferred location on the surface of the resistor that exhibits minimal voltage deviation; and

directing high-power pulses of laser output along a trim path at the preferred location on the surface area of the resistor or at the preferred location on any respective resistor on the same substrate or from a same batch of resistors to remove resistor material from the respective resistor to change its initial resistance value to a nominal resistance value to reduce thermoelectric resistance deviations induced by the laser output, the high-power laser pulses having higher power than the low-power laser pulses.

35. A method for employing laser output to trim resistor material from a resistor to change an initial resistance value of the resistor to a nominal resistance value, wherein the resistor material has a surface area positioned between electrical contacts and is supported on a substrate, wherein laser output applied to the resistor material induces thermoelectric effects in the resistor that cause the resistor to exhibit an errant or transient resistance value that deviates from a true or steady state resistance value of the resistor that is measured during an absence of the laser output such that the applied laser output prevents an accurate measurement of the true or steady state resistance value immediately following the applied laser output, a method for reducing resistance value deviations caused by laser-induced thermoelectric effects, comprising:

positioning probes of measurement equipment to be in communication with a single resistor or respective resistors from a set of resistors;

setting an applied current value from the measurement equipment to a reference or zero value;

directing respective sets of one or more evaluation pulses of laser output along respective simulation paths to apply heat to different respective locations on the surface areas of the single resistor or the respective resistors, the evaluation pulses having parameters that are insufficient to cause significant removal of resistor material;

measuring voltage values across the single resistor or the respective resistors after the respective sets of evaluation laser pulses to obtain voltage deviation information for each of the different respective locations;

using the voltage deviation information to determine a preferred location on the respective surface areas of the respective resistors that exhibits minimal voltage deviation; and

directing trimming pulses of laser output along a trim path at the preferred location on the surface area of the single resistor or the preferred locations on the surface area of some or all of the set of resistors to remove resistor material from them to change their initial resistance value to a nominal resistance value to reduce thermoelectric resistance deviations induced by the laser output.