Shallow source MOSFET
First Claim
1. A semiconductor device comprising:
- a drain;
a body in contact with the drain, the body having a body top surface;
a plurality of source regions embedded in the body, extending downward from the body top surface into the body;
a trench extending through the plurality of source regions and the body to the drain, said trench having a trench opening and a trench wall; and
a gate disposed in the trench, said gate having a gate top surface that extends substantially above the body top surface at least in the center region of the trench opening, and said gate having a vertical edge that includes an extended portion extending above the trench opening, the extended portion being substantially aligned with the trench wall; and
a plurality of spacers insulating the source from the gate, each of the plurality of spacers being situated immediately adjacent to the gate and immediately adjacent to a respective one of the plurality of source regions, wherein each of the plurality of spacers does not substantially extend into the trench and does not substantially extend over the trench;
a dielectric layer disposed over the source, the spacers, the gate, and at least a portion of the body, the dielectric layer forming a contact opening that has a width that is narrower than a distance between edges of the source regions; and
a metal layer disposed over the dielectric layer, making a contact with the body at the contact opening.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device comprises a drain, a body in contact with the drain, the body having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a trench extending through the source and the body to the drain, and a gate disposed in the trench, having a gate top surface that extends substantially above the body top surface. A method of fabricating a semiconductor device comprises forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate, through the hard mask, depositing gate material in the trench, where the amount of gate material deposited in the trench extends beyond the top substrate surface, and removing the hard mask to leave a gate structure that extends substantially above the top substrate surface.
-
Citations
13 Claims
-
1. A semiconductor device comprising:
-
a drain; a body in contact with the drain, the body having a body top surface; a plurality of source regions embedded in the body, extending downward from the body top surface into the body; a trench extending through the plurality of source regions and the body to the drain, said trench having a trench opening and a trench wall; and a gate disposed in the trench, said gate having a gate top surface that extends substantially above the body top surface at least in the center region of the trench opening, and said gate having a vertical edge that includes an extended portion extending above the trench opening, the extended portion being substantially aligned with the trench wall; and a plurality of spacers insulating the source from the gate, each of the plurality of spacers being situated immediately adjacent to the gate and immediately adjacent to a respective one of the plurality of source regions, wherein each of the plurality of spacers does not substantially extend into the trench and does not substantially extend over the trench; a dielectric layer disposed over the source, the spacers, the gate, and at least a portion of the body, the dielectric layer forming a contact opening that has a width that is narrower than a distance between edges of the source regions; and a metal layer disposed over the dielectric layer, making a contact with the body at the contact opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
Specification