Integrated matching networks and RF devices that include an integrated matching network
First Claim
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1. An integrated matching network comprising:
- a first die comprising an RF active component;
a second die comprising a first capacitor; and
a first metal interconnect coupled to the RF active component and the first capacitor, the first metal interconnect having a first inductance, wherein the first capacitor and the first inductance form a shunt impedance.
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Abstract
An integrated matching network includes a first die on a substrate, a second die on the substrate, and a metallization layer on the first and second dies. The second die has a capacitance, the metallization layer has an inductance, and the capacitance and inductance together provide a shunt impedance from the first die to the substrate. The integrated matching network includes a first die having a power amplifier, a second die having a capacitor, and a metal interconnect coupled to the power amplifier and the first capacitor. The metal interconnect has an inductance. The capacitor and metal interconnect form a shunt impedance.
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Citations
20 Claims
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1. An integrated matching network comprising:
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a first die comprising an RF active component; a second die comprising a first capacitor; and a first metal interconnect coupled to the RF active component and the first capacitor, the first metal interconnect having a first inductance, wherein the first capacitor and the first inductance form a shunt impedance. - View Dependent Claims (2, 3, 4, 5)
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6. An integrated matching network comprising:
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a first die having first and second opposing surfaces, wherein the first surface of the first die is coupled to a substrate; a second die having first and second opposing surfaces and a capacitance, wherein the first surface of the second die is coupled to the substrate; and an inductive component that includes an insulator substrate and a first metallization layer coupled to the insulator substrate, wherein the first metallization layer is coupled to the second surface of the first die and to the second surface of the second die, wherein the first metallization layer has an inductance, and wherein the capacitance and the inductance together provide a shunt impedance from the first die to the substrate. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A radio frequency (RF) device having an integrated matching network, the RF device comprising:
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a first substrate; an RF active die coupled to the first substrate, the RF active die having first and second opposing surfaces, an RF active component, and an output of the RF active component, wherein the first surface of the RF active die is coupled to the first substrate; a first integrated passive device (IPD) coupled to the first substrate, the first IPD having first and second opposing surfaces, a first capacitance incorporated therewith, and an input, wherein the first surface of the first IPD is coupled to the first substrate; and a second substrate having a first metal interconnect formed thereon, wherein the first metal interconnect is coupled between the second surface of the die and the second surface of the first IPD in order to couple the output of the RF active component with the input of the first IPD, wherein the first metal interconnect has an inductance that is coupled in series with the first capacitance, and wherein the inductance and the first capacitance provide a matching impedance for the RF active component. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification