Back-illuminated Si photomultipliers: structure and fabrication methods
First Claim
1. A back-illuminated silicon photomultiplier comprising:
- a p-type substrate having front and back sides;
a matrix of n+ regions in the p-type substrate;
a matrix of p+ regions under the matrix of n+ regionsand adjacent the back side of the substrate, with the bottoms of the matrix of n+ regions each forming a p/n junction with the substrate or the respective p+ region;
a common anode formed by a uniform p++ deposition or implantation on the back side of the substrate; and
,cathode contacts coupled to each of the n+ regions.
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Abstract
Back-illuminated silicon photomultipliers having a substrate of a first conductivity type having front and back sides, a matrix of regions of a second conductivity type in the substrate, a matrix of regions of the first conductivity type under the matrix of regions of the second conductivity type and adjacent the back side of the substrate, with the bottom of the matrix of regions of the second conductivity type forming a p/n junction with the substrate or a matrix of regions of the second conductivity type, the matrix of regions of the first conductivity type having a higher conductivity than the substrate, a common anode formed by a uniform layer of the first conductivity type of higher conductivity than the substrate on the back side of the substrate. Preferably a plurality of trenches filed with an opaque material are provided in the back side of the substrate, the substrate preferably having a thickness of less than approximately 150 um.
57 Citations
32 Claims
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1. A back-illuminated silicon photomultiplier comprising:
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a p-type substrate having front and back sides; a matrix of n+ regions in the p-type substrate; a matrix of p+ regions under the matrix of n+ regions and adjacent the back side of the substrate, with the bottoms of the matrix of n+ regions each forming a p/n junction with the substrate or the respective p+ region; a common anode formed by a uniform p++ deposition or implantation on the back side of the substrate; and
,cathode contacts coupled to each of the n+ regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A back-illuminated silicon photomultiplier comprising:
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a p-type substrate having front and back sides, and a thickness of less than approximately 150 um; a matrix of n+ regions in the p-type substrate; a matrix of p+ regions under the matrix of n+ regions and adjacent the back side of the substrate, with the bottom of the matrix of n+ regions forming a p/n junction with the substrate or the p+ region; a common anode formed by a uniform p++ deposition or implantation on the back side of the substrate; a plurality of trenches in the back side of the substrate between the n+ regions, the trenches being filled with an opaque material; and cathode contacts coupled to each of the n+ regions. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A back-illuminated silicon photomultiplier comprising:
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a substrate of a first conductivity type having front and back sides, and a thickness of less than approximately 150 um; a matrix of regions of a second conductivity type in the substrate; a matrix of regions of the first conductivity type under the matrix of regions of the second conductivity type and adjacent the back side of the substrate, with the bottom of the matrix of regions of the second conductivity type forming a p/n junction with the substrate or the matrix of regions of the first conductivity type, the matrix of regions of the first conductivity type having a higher conductivity than the substrate;
a common anode formed by a uniform layer of the first conductivity type of higher conductivity than the substrate on the back side of the substrate;
a plurality of trenches in the back side of the substrate between the second conductivity type regions, the trenches being filled with an opaque material; and
cathode contacts coupled to each of the regions of the second conductivity type. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32)
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Specification